Etchant Composition for Copper-Titanium Metal Wire Defect Reduction
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing etchant compositions for metal wire and thin film transistor array panel manufacturing suffer from low etching ratios, wire defects like disconnections, and environmental concerns such as heat emission and the use of environmentally regulated materials like arsenic.
Innovation Solution
An etchant composition comprising persulfate, ammonium fluoride, inorganic acid, cyclic amine compound, sulfonic acid, and organic acid or its salt, which effectively etches copper and titanium layers with improved stability and reduced defects, minimizing glass and photoresist damage, and mitigating heat emission.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional etchant compositions are used, then the etching process can be performed, but the etching ratio to metal is low and temporal characteristics are poor
Solution Approach 1:
The patent changes the chemical composition parameters of the etchant by incorporating specific concentrations of persulfate (0.5-20 wt%), ammonium fluoride (0.5-0.9 wt%), inorganic acid (1-10 wt%), cyclic amine compound (0.5-5 wt%), sulfonic acid (0.1-10 wt%), and organic acid (5-10 wt%). This parameter optimization simultaneously improves etching ratio and temporal stability, resolving the contradiction between productivity and reliability.
2Ease of manufacture
If conventional etching methods are used, then metal etching is achieved, but glass and photoresist lifting phenomena occur
Solution Approach 1:
The patent applies local quality by making the etchant selectively reactive - it is designed to etch metal layers (copper and titanium) with high efficiency while being locally gentle to other materials. The specific chemical composition with controlled concentrations of various acids and additives creates localized chemical affinity that targets metal etching while minimizing damage to glass substrates and photoresist patterns.
3Productivity
If traditional etchant compositions are used, then etching can proceed, but environmentally regulated materials like arsenic are used and heat emission occurs
Solution Approach 1:
The patent converts the harmful aspect of strong etching capability into a benefit by using environmentally friendly chemicals that provide sufficient etching power without generating regulated waste. The composition uses persulfate, ammonium fluoride, and organic acids that are less environmentally harmful than traditional arsenic-based etchants, while still achieving high etching ratios. The heat emission issue is addressed by selecting chemicals with favorable thermal characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The etchant composition enhances etching ratios, reduces wire defects, and minimizes environmental impact by eliminating arsenic use and reducing heat emission, thereby improving the quality and productivity of metal wire and thin film transistor array panel manufacturing.
Implementation Method 1
an etchant composition including, based on a total weight of the etchant composition, about 0.5 wt % to about 20 wt % of a persulfate
Implementation Method 2
about 0.5 wt % to about 0.9 wt % of an ammonium fluoride
Implementation Method 3
about 1 wt % to about 10 wt % of an inorganic acid
Data Source
AI summary
A etchant composition that includes, based on a total weight of the etchant composition, about 0.5 wt % to about 20 wt % of a persulfate, about 0.5 wt % to about 0.9 wt % of an ammonium fluoride, about 1 wt % to about 10 wt % of an inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 10.0 wt % of a sulfonic acid, about 5 wt % to about 10 wt % of an organic acid or a salt thereof, and a remainder of water. The etchant composition may be configured to etch a metal layer including copper and titanium, to form a metal wire that may be included in a thin film transistor array panel of a display device.