Etched MQW Facet Alignment for Silicon Photonic Waveguides

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Solution Overview

Problem

The precise placement of contact metal on a chip relative to its facets is challenging due to variations in chip placement within a silicon platform, limiting the efficiency of optical devices like lasers and modulators.

Innovation Solution

The solution involves etching facets on the chip after it has been bonded to the platform, allowing for precise alignment and closer placement of contact metal to the etched facets, thereby optimizing the length and alignment of active waveguides.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If contact metal is placed on the chip before bonding to the platform, then the manufacturing process is simpler, but the alignment precision between contact metal and chip facets deteriorates due to variations in chip placement

Engineering Contradiction:
Improvemanufacturing process simplicityVSAvoidalignment precision between contact metal and chip facets
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent applies preliminary action by etching the facets on the chip after bonding to the platform but before placing the contact metal. This sequence allows the facets to be precisely defined on the bonded chip surface, enabling accurate alignment of contact metal with the etched facets while maintaining manufacturing simplicity

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent inverts the conventional sequence by etching facets after bonding rather than before, and placing contact metal after etching rather than before. This reversed sequence resolves the contradiction by enabling precise facet definition on the bonded chip while maintaining process simplicity

Inventive Principle:
Principle #13The other way round (Inversion)

2Productivity

If the length of un-pumped III-V material is reduced, then the efficiency of optical devices is improved, but the active region length becomes harder to control

Engineering Contradiction:
Improveoptical device efficiencyVSAvoidactive region length control
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent applies parameter changes by using the etching process to precisely control the length of the active region and the position of facets. By adjusting etching depth and pattern, the active region length can be optimized to reduce un-pumped III-V material while maintaining precise control over the optical device performance parameters

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances the efficiency of optical devices by reducing un-pumped III-V material, improving light modulation, and allowing for adjustable active region lengths without altering the chip dimensions.

Implementation Method 1

The first waveguide may be configured to guide an optical beam to pass through the first etched facet. The second waveguide may be configured to guide the optical beam to pass through the sidewall.

Methodology Applied
Scientific EffectOptical guidance: Waveguide (optics)

Implementation Method 2

The second waveguide may be optically aligned with the first waveguide.

Methodology Applied
Scientific EffectOptical alignment:

Data Source

PatentUS12253714B2Etched facet in a multi quantum well structure
Publication Date: 2025.03.18 SKORPIOS TECHNOLOGIES INC
  • US12253714B2 patent drawing
  • US12253714B2 patent drawing
  • US12253714B2 patent drawing

AI summary

An exemplary multi quantum well structure may include a silicon platform having a pit formed in the silicon platform, a chip positioned inside the pit, a first waveguide formed in the chip, and a second waveguide formed in the silicon platform. The pit may be defined at least in part by a sidewall and a base. The chip may include a first side and a first recess in the first side. The first side may be defined in part by a first cleaved or diced facet. The first recess may be defined in part by a first etched facet. The first waveguide may be configured to guide an optical beam to pass through the first etched facet. The second waveguide may be configured to guide the optical beam to pass through the sidewall. The second waveguide may be optically aligned with the first waveguide.