Etched Spark Gap Packaging for Compact ESD Protection
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Solution Overview
Problem
Traditional spark gap designs for electrostatic discharge (ESD) protection in semiconductor devices are often separate from the main semiconductor package, leading to increased manufacturing complexity, larger device footprints, and potential reliability issues, while existing IC-level protection methods consume valuable die area and increase costs.
Innovation Solution
An etched spark gap structure is integrated within semiconductor packaging, comprising electrodes encapsulated in semiconductor plastic with a sacrificial layer that is removable to form a spark gap, and protected by a plating layer, allowing precise control over gap dimensions and integration into the packaging process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional discrete spark gap components are used for ESD protection, then ESD protection is provided, but manufacturing complexity increases and device footprint enlarges
Solution Approach 1:
The spark gap structure is merged with the semiconductor package by integrating electrodes directly into the packaging material. The first electrode is formed on the package surface and the second electrode is embedded within the package, creating an integrated ESD protection structure that eliminates the need for separate discrete components, thereby reducing manufacturing complexity while maintaining ESD protection functionality
2Reliability
If traditional discrete spark gap components are used for ESD protection, then ESD protection is provided, but device footprint increases
Solution Approach 1:
The spark gap structure is nested within the semiconductor package volume rather than occupying external space. The second electrode is embedded inside the package material, and the spark gap forms within the package structure itself, allowing ESD protection functionality to be contained within the existing device footprint without requiring additional external components
3Reliability
If IC-level protection methods are used, then ESD protection is provided, but valuable die area is consumed and costs increase
Solution Approach 1:
The ESD protection function is moved from the two-dimensional IC die plane to the three-dimensional package structure. By forming electrodes within the package volume and using the package material itself as part of the protection structure, the solution utilizes the third dimension (depth/thickness) to provide ESD protection without consuming valuable die area on the IC chip surface
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach provides compact, cost-effective, and precise ESD protection by integrating spark gaps directly into semiconductor packaging, reducing device size and manufacturing complexity while ensuring tailored protection for each connection point.
Implementation Method 1
A sacrificial layer is positioned within the gap, wherein the sacrificial layer is removable to form a spark gap between the first electrode and the second electrode
Implementation Method 2
Electrostatic discharge (ESD) protection is a crucial consideration in semiconductor device design and manufacturing
Implementation Method 3
This occurs when the voltage discharged during the ESD event exceeds the voltage breakdown threshold of the material to a high enough degree that the circuit material explodes
Data Source
AI summary
The present disclosure provides a semiconductor device comprising a first electrode and a second electrode positioned opposite each other with a gap between them, a semiconductor plastic encapsulating the first electrode and the second electrode, a protective plating layer on the first electrode and the second electrode, and a sacrificial layer positioned within the gap. The sacrificial layer is removable to form a spark gap between the first electrode and the second electrode. A method of manufacturing the semiconductor device includes forming the electrodes, depositing a protective plating layer and the sacrificial layer, encapsulating the components with semiconductor plastic, and removing the sacrificial layer to form the spark gap. The protective plating layer may include etch resistant and mechanically hard materials to protect the electrodes during manufacturing and operation.