Plasma Etching Chamber Coating for By-Product Re-Adsorption Control
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Solution Overview
Problem
The re-adsorption of copper etching by-products inside the chamber of a plasma etching device leads to unstable etching processes and defects, necessitating frequent chamber cleaning.
Innovation Solution
A plasma etching device with a first antenna connected to a high-frequency power source and a second antenna connected to a low-frequency power source, along with a controller, is used to coat the chamber with an insulating layer before etching, and then remove it after etching using low-frequency power to clean the chamber.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If copper etching is performed in the chamber, then low resistance signal lines are formed, but reaction by-products are generated that re-adsorb inside the chamber causing etching instability and defects
Solution Approach 1:
An insulating layer is introduced as an intermediary between the chamber wall and the copper etching by-products. This layer prevents direct contact and re-adsorption of by-products on the chamber surface, thereby maintaining etching stability without requiring frequent chamber cleaning interruptions
Solution Approach 2:
The harmful by-products that would normally re-adsorb and cause defects are converted into a beneficial cleaning mechanism. By applying low-frequency power to the second antenna after etching, the insulating layer is removed together with the adsorbed by-products, achieving chamber cleaning while maintaining operational efficiency
2Manufacturing precision
If the chamber is periodically cleaned to remove by-products, then etching stability is maintained, but facility operation rate decreases due to process interruptions
Solution Approach 1:
The insulating layer is applied in advance before the copper etching process begins. This preliminary action prevents by-product re-adsorption during the entire etching sequence, allowing multiple etching steps to be performed without intermediate cleaning interruptions, thereby maintaining both etching stability and high facility operation rate
Solution Approach 2:
The chamber cleaning is transformed from a frequent periodic interruption into a single periodic action performed only after the complete etching sequence. The low-frequency power is applied periodically to remove the insulating layer with adsorbed by-products, minimizing interruptions while maintaining etching stability throughout the production run
3Productivity
If high-frequency power is applied to the first antenna, then plasma etching is performed effectively, but by-products are generated that require chamber cleaning
Solution Approach 1:
The power frequency is segmented into two distinct ranges: high-frequency power for the first antenna during etching to maximize etching efficiency, and low-frequency power for the second antenna during cleaning to effectively remove by-products. This segmentation allows each antenna to operate in its optimal frequency range for its specific function
Solution Approach 2:
The insulating layer serves as a mediator that separates the by-products generated by high-frequency etching from the chamber wall. This mediation allows high-frequency etching to proceed efficiently without direct by-product adsorption on chamber surfaces, and enables subsequent low-frequency cleaning to remove both the layer and by-products together
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves facility operation rates and minimizes defects by effectively removing reaction by-products, maintaining the chamber's cleanliness.
Implementation Method 1
an etching process using plasma is performed
Implementation Method 2
a first antenna connected to a high-frequency power source
Implementation Method 3
a second antenna connected to a low-frequency power source and positioned along at least a portion of a circumference or perimeter of the first antenna
Implementation Method 4
coating an inside of the chamber with an insulating layer by applying low-frequency power to the second antenna
Implementation Method 5
cleaning the inside of the chamber and removing the insulating layer by applying low-frequency power to the second antenna
Implementation Method 6
effectively removing reaction by-products inside the chamber
Data Source
AI summary
The present disclosure relates to a plasma etching device, an embodiment of which includes: a chamber in which an etching process using plasma is performed, an inside of which is coated with an insulating layer before the etching process, the insulating layer being removable after the etching process; a first antenna connected to a high-frequency power source and positioned on the chamber; a second antenna connected to a low-frequency power source and positioned along at least a portion of a perimeter of the first antenna; and a controller electrically connected to control the high-frequency power source and the low-frequency power source.