Plasma Etching Base and Electrostatic Chuck Temperature Control

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Solution Overview

Problem

Conventional plasma etching apparatuses face issues with the junction layer peeling off due to excessive temperature differences between the base and the electrostatic chuck, which can exceed the tolerable temperature range of the junction layer during heating.

Innovation Solution

A control method that dynamically adjusts the temperatures of the base and the electrostatic chuck within tolerable limits by using a chiller to circulate a cooling medium, ensuring that the temperature differences between the base and the electrostatic chuck remain within the junction layer's tolerable range during processing steps.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If the temperature of the electrostatic chuck is increased by heating using the heater, then the temperature control range is extended, but the junction layer is peeled off when the temperature difference between the base and the electrostatic chuck exceeds the tolerable temperature

Engineering Contradiction:
Improvetemperature control rangeVSAvoidjunction layer integrity
Core Design Contradiction:
TemperatureVSReliability

Solution Approach 1:

The control method performs preliminary cooling of the base using the chiller before heating the electrostatic chuck. By pre-adjusting the base temperature to account for the expected temperature increase, the system ensures that the temperature difference remains within the tolerable range of the junction layer throughout the heating process, preventing peeling while extending the temperature control range

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The system continuously monitors the temperatures of both the base and electrostatic chuck, and dynamically adjusts the heating and cooling powers based on the real-time temperature difference. This feedback control ensures that the temperature difference never exceeds the tolerable threshold, allowing the electrostatic chuck to operate across an extended temperature range without compromising junction layer integrity

Inventive Principle:
Principle #23Feedback

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Prevents the peeling off of the junction layer by maintaining temperature differences within safe limits, thereby ensuring stable operation and extending the temperature control range during processing.

Implementation Method 1

controlling a temperature of the base to a first temperature

Methodology Applied
Scientific EffectHeat transfer: Conduction (thermal)

Implementation Method 2

controlling a temperature of an electrostatic chuck that is disposed on a mounting surface of the base so as to mount thereon an object to be processed and has a heater installed therein

Methodology Applied
Scientific EffectJoule heating: Joule Heating

Data Source

PatentUS8809197B2Plasma etching apparatus and control method
Publication Date: 2014.08.19 TOKYO ELECTRON LTD
  • US8809197B2 patent drawing
  • US8809197B2 patent drawing
  • US8809197B2 patent drawing

AI summary

In a control method, a first processing is performed on an object to be processed by controlling a temperature of a base to a first temperature and controlling a temperature of an electrostatic chuck that is disposed on a mounting surface of the base so as to mount thereon the object to be processed and has a heater installed therein to a second temperature. A second processing is performed on the object by controlling a temperature of the base to a third temperature and controlling a temperature of the electrostatic chuck to a fourth temperature by a heater. In the control method, a difference between the first temperature and the second temperature and a difference between the third temperature and the fourth temperature are within a tolerable temperature of the junction layer for bonding the base and the electrostatic chuck.