Etching Composition for Selective Silicon-Germanium Removal
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Solution Overview
Problem
Existing etching compositions lack sufficient etch selectivity between polysilicon and SiGe films, which is crucial for advanced semiconductor device fabrication, particularly in gate-all-around structures where precise removal of silicon-germanium films is necessary for higher integration and competitiveness.
Innovation Solution
An etching composition comprising a peracetic acid mixture, a fluorine compound, and an acetate series organic solvent, with specific weight percentages, is used to selectively remove silicon-germanium films from stack structures, enhancing etch selectivity and reducing damage to oxide membranes and electrical characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If existing etching compositions are used, then the etching process can be performed, but the etch selectivity between polysilicon film and SiGe film is insufficient
Solution Approach 1:
The patent changes the chemical parameters of the etching composition by incorporating peracetic acid mixture, fluorine compound, and acetate series organic solvent in specific proportions. This chemical parameter modification enables high etch selectivity between SiGe and polysilicon films while minimizing damage to oxide membranes, directly resolving the technical contradiction between manufacturing precision and reliability.
Solution Approach 2:
The patent uses a composite etching composition comprising multiple chemical components (peracetic acid mixture, fluorine compound, acetate series organic solvent, and water) working together. This composite formulation achieves synergistic effects that provide both high etch selectivity and protection against oxide membrane damage, simultaneously improving manufacturing precision and reliability.
2Productivity
If existing etching compositions are used, then the etching process can be performed, but the removal rate of SiGe film is insufficient
Solution Approach 1:
The patent modifies the chemical composition parameters by introducing peracetic acid mixture as a key component alongside fluorine compound and acetate series organic solvent. This parameter change simultaneously enhances both the removal rate of SiGe film and the etch selectivity, resolving the contradiction between productivity and manufacturing precision.
Solution Approach 2:
The patent employs peracetic acid mixture, a strong oxidizing agent, to accelerate the oxidation and removal of SiGe film. This strong oxidant mechanism increases the removal rate while maintaining high etch selectivity through controlled chemical reactions, effectively resolving the contradiction between productivity and manufacturing precision.
3Manufacturing precision
If conventional etching compositions are used, then the process is simple, but the etch selectivity between different silicon-based films cannot be optimized
Solution Approach 1:
The patent optimizes the composition parameters by selecting specific chemical components (peracetic acid mixture, fluorine compound, acetate series organic solvent) in defined proportions. This parameter optimization achieves high etch selectivity while maintaining reasonable process simplicity, balancing manufacturing precision with device complexity.
Solution Approach 2:
The patent introduces acetate series organic solvent as an intermediary component that mediates between the strong oxidizing peracetic acid mixture and the SiGe film. This intermediary substance helps control the etching reaction to achieve high selectivity while keeping the overall composition and process manageable, resolving the contradiction between manufacturing precision and device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The etching composition achieves high etch selectivity and rapid removal of silicon-germanium films while minimizing etching of silicon films, thereby improving semiconductor device characteristics and preventing damage to oxide membranes.
Implementation Method 1
an etching composition may include a peracetic acid mixture, a fluorine compound, an acetate series organic solvent, and water. The etching composition may be used to selectively remove silicon-germanium (SiGe).
Implementation Method 2
a fluorine compound, an acetate series organic solvent, and water
Data Source
AI summary
An etching composition may include a peracetic acid mixture, a fluorine compound, an organic solvent (e.g., acetate-series organic solvent), and water. The etching composition may be used to selectively etch silicon-germanium (SiGe).