Etching Gas Composition for Low-Distortion Semiconductor Patterns
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Solution Overview
Problem
The increasing demand for miniaturization in semiconductor devices requires an etching gas composition that improves pattern hole distortion and reduces critical dimension (CD) of pattern lines while maintaining excellent etch selectivity, which existing technologies have not adequately addressed.
Innovation Solution
An etching gas composition comprising at least two C3 or C4 organic fluorine compounds, specifically isomers such as 1,1,1,2,3,3-hexafluoropropane and 1,1,1,3,3,3-hexafluoropropane, combined with tantalum fluoride (TaF5), which are used in a substrate processing apparatus to form patterns with improved profiles and reduced hole distortion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional etching gas compositions are used, then etching process can be performed, but pattern hole distortion occurs and pattern profile deteriorates
Solution Approach 1:
The patent changes the chemical composition parameters of the etching gas by using specific ratios of C3/C4 organic fluorine compounds (60-95 vol%) and oxygen (5-40 vol%), along with tantalum fluoride additive (1-5 vol%). This parameter optimization resolves the contradiction by achieving both reduced hole distortion and improved pattern profile simultaneously
Solution Approach 2:
The patent creates a composite etching gas system by combining multiple components: C3/C4 organic fluorine compounds (such as CF3CH2CHF2 and CF3CHFCF3), oxygen, and tantalum fluoride. This composite approach allows the gas mixture to simultaneously reduce hole distortion and improve pattern profile, resolving the technical contradiction
2Manufacturing precision
If etching gas composition is optimized for pattern profile, then pattern profile improves, but etch selectivity decreases
Solution Approach 1:
The patent optimizes the volume ratio parameters of gas components, specifically setting C3/C4 organic fluorine compounds at 60-95 vol% and oxygen at 5-40 vol%. This parameter range achieves the dual benefit of improved pattern profile and maintained etch selectivity, resolving the contradiction between these two features
3Manufacturing precision
If oxygen content is increased to improve pattern profile, then pattern profile improves, but etch selectivity and hole distortion worsen
Solution Approach 1:
The patent introduces tantalum fluoride as a composite additive (1-5 vol%) to the oxygen-containing etching gas system. This composite approach allows the use of optimized oxygen levels (5-40 vol%) for pattern profile while the tantalum fluoride maintains etch selectivity and reduces hole distortion, resolving the contradiction
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The etching gas composition effectively reduces hole distortion and maintains high etch selectivity, enabling the formation of patterns with various aspect ratios without increasing oxygen content, thus improving pattern profiles and electrical characteristics of semiconductor devices.
Implementation Method 1
etching the layer to be etched through the etching mask by using plasma obtained from an etching gas composition
Data Source
AI summary
An etching gas composition includes at least two C3 or C4 organic fluorine compounds and tantalum fluoride, and the at least two C3 or C4 organic fluorine compounds are isomers.