Etching Gas Composition for Uniform High-Aspect-Ratio Pattern Profiles
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Solution Overview
Problem
The miniaturization of semiconductor devices leads to distorted or nonuniform pattern profiles due to the lack of etching gas compositions with high etch selectivity and uniformity, which affects the reliability of integrated circuit manufacturing.
Innovation Solution
An etching gas composition comprising an organic fluorine compound and tungsten fluoride, along with inert and reactive gases, is used to form a fluorinated carbon-based polymer passivation layer, enhancing etch selectivity and uniformity of pattern profiles by reducing line edge roughness and line width roughness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional etching gas compositions are used for miniaturized patterns, then etching can be performed, but pattern profiles become distorted and nonuniform
Solution Approach 1:
The patent changes the chemical composition parameters of the etching gas by incorporating organic fluorine compounds (C3F6, C4F6, C4F8, C5F8, C6F6) with specific carbon atom counts and controlling tungsten fluoride content at 2% or less. This parameter optimization enables high etch selectivity and uniform pattern profiles in miniaturized semiconductor devices
Solution Approach 2:
The patent uses composite etching gas compositions combining multiple organic fluorine compounds with tungsten fluoride and inert gases. This composite approach creates synergistic effects that improve etch selectivity and pattern uniformity beyond what single compounds can achieve
2Manufacturing precision
If etching gas composition is optimized for high etch selectivity, then pattern profile uniformity improves, but gas composition complexity increases
Solution Approach 1:
The patent optimizes specific parameters including organic fluorine compound types (C3F6, C4F6, C4F8, C5F8, C6F6), their concentration ratios, and tungsten fluoride content (≤2%). These controlled parameter changes achieve high etch selectivity while maintaining manageable gas composition complexity through systematic formulation
3Productivity
If tungsten fluoride content is increased to improve etching performance, then etch rate increases, but line edge roughness and line width roughness increase
Solution Approach 1:
The patent identifies and controls the tungsten fluoride content parameter, setting it at 2% or less in the etching gas composition. This parameter optimization balances etch rate with pattern uniformity, preventing excessive line edge and line width roughness while maintaining productive etching speeds
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The etching gas composition effectively prevents distortion of vertical holes with high aspect ratios, ensuring uniform profiles and improved reliability in integrated circuit device manufacturing by controlling the content of tungsten fluoride within the composition.
Implementation Method 1
forming a fluorinated carbon-based polymer passivation layer by using plasma obtained from the etching gas composition
Implementation Method 2
forming a fluorinated carbon-based polymer passivation layer by using plasma obtained from the etching gas composition
Data Source
AI summary
An etching gas composition includes an organic fluorine compound and tungsten fluoride.