Etching Mask HMDS Adhesion Layer Semiconductor Yield

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Solution Overview

Problem

The existing etching processes in semiconductor manufacturing often damage the structure under the photoresist due to deficiencies in the photoresist, leading to reduced yield rates.

Innovation Solution

A method involving the formation of a hard mask layer with a hexamethyldisilazane (HMDS) layer between the hard mask and the photoresist layer, which enhances adhesion and protects the underlying structure during etching.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If a photoresist layer is used directly on the hard mask layer, then the etching process can be performed, but the photoresist deficiency causes damage to the structure under the photoresist

Engineering Contradiction:
Improveyield rateVSAvoidphotoresist integrity
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

An HMDS layer is introduced as an intermediary between the photoresist layer and the hard mask layer. This intermediate layer prevents direct contact between the photoresist and the underlying structure, thereby preventing damage caused by photoresist deficiency during the etching process while maintaining the photoresist's protective function.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Ease of manufacture

If the photoresist layer is formed directly on the hard mask layer, then the fabrication process is simpler, but adhesion between layers is insufficient

Engineering Contradiction:
Improvefabrication simplicityVSAvoidlayer adhesion
Core Design Contradiction:
Ease of manufactureVSStrength

Solution Approach 1:

The HMDS layer serves as an adhesion promoter and intermediary layer between the photoresist and hard mask. It enhances the bonding strength between these layers through its chemical properties, ensuring reliable adhesion without significantly complicating the fabrication process.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Reliability

If a multi-layer etching mask with HMDS layer is used, then adhesion is improved and structure protection is enhanced, but the device complexity increases

Engineering Contradiction:
Improvestructure protectionVSAvoidetching mask complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The etching mask is segmented into multiple functional layers: the photoresist layer for pattern definition, the HMDS layer for adhesion enhancement and protection, and the hard mask layer for structural support. This segmentation allows each layer to perform its specific function optimally, improving overall reliability while managing complexity through functional specialization.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The HMDS layer improves the adhesion between the photoresist and the hard mask, preventing damage to the structure beneath the etching mask and enhancing the yield rate of semiconductor manufacturing by ensuring effective etching without structural damage.

Implementation Method 1

the HMDS layer is formed by a vapor prime process

Methodology Applied
Scientific EffectVapor deposition: Physical Vapour Deposition

Data Source

PatentUS11631585B2Etching mask, method for fabricating the same, and method for fabricating a semiconductor structure using the same
Publication Date: 2023.04.18 NAN YA TECH
  • US11631585B2 patent drawing
  • US11631585B2 patent drawing
  • US11631585B2 patent drawing

AI summary

A method for fabricating a semiconductor structure includes: providing a substrate and a dielectric layer on the substrate; and forming an etching mask on the dielectric layer; and etching the dielectric layer using the etching mask to form at least one opening therein. The etching mask includes: a hard mask layer, a photoresist layer, and a hexamethyldisilazane (HMDS) layer. The photoresist layer is located over the hard mask layer, and the HMDS layer is located between the hard mask layer and the photoresist layer.