Etching Characteristic Estimation for Nitrogen-Compound Workpieces

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Solution Overview

Problem

Existing methods struggle to precisely predict etching characteristics during the etching of workpieces containing nitrogen compounds using CHxFy-based gases, as they fail to account for the effects of nitrogen and hydrogen in the etching gas.

Innovation Solution

An etching characteristic estimation method that calculates multiple fluxes in a surface reaction model, including incident and outfluxes of nitrogen and hydrogen, to select an appropriate removal term for estimating the thickness of the protection film layer, which is then used to predict etching characteristics and calculate crystal defects and processing shapes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If existing etching models are used for workpieces containing nitrogen compounds, then the model structure remains simple, but the etching characteristic prediction precision deteriorates because nitrogen and hydrogen effects are not considered

Engineering Contradiction:
Improveetching characteristic prediction precisionVSAvoidmodel complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent segments the etching model into multiple distinct components: a surface reaction model that calculates fluxes of nitrogen and hydrogen, and a protection film layer model that uses these fluxes to determine film thickness. This segmentation allows the complex nitrogen-hydrogen interaction effects to be captured through modular calculation steps, improving prediction precision while managing model complexity through structured organization of the physical chemistry processes

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent performs preliminary calculation of nitrogen flux and hydrogen flux before determining the protection film layer thickness. By pre-calculating these fluxes using the surface reaction model and then using them as inputs for the film thickness calculation, the model anticipates the effects of nitrogen and hydrogen on etching characteristics before the actual etching process is simulated, thereby improving prediction accuracy

Inventive Principle:
Principle #10Preliminary action

2Manufacturing precision

If the surface reaction model calculates multiple fluxes including nitrogen and hydrogen, then the etching characteristic estimation accuracy improves, but the calculation complexity increases

Engineering Contradiction:
Improveetching process precisionVSAvoidcalculation system complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The surface reaction model serves multiple functions: it calculates the flux of nitrogen, calculates the flux of hydrogen, and provides these fluxes as inputs for the protection film layer thickness calculation. This multi-functionality allows a single model component to handle multiple aspects of the nitrogen-hydrogen interaction, improving etching process precision while avoiding the need for separate specialized models for each flux calculation

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The fluxes of nitrogen and hydrogen act as intermediaries between the surface reaction model and the protection film layer model. The surface reaction model generates these fluxes, which then mediate the calculation of protection film layer thickness. This intermediary approach allows the complex nitrogen-hydrogen effects to be transmitted through well-defined flux parameters, improving precision while maintaining clear causal relationships in the calculation chain

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach allows for precise estimation of etching characteristics and control of crystal defects and processing shapes by accurately accounting for the fluxes of nitrogen and hydrogen, enhancing the precision of dry etching processes.

Implementation Method 1

a flux calculation unit that calculates a plurality of fluxes in a surface reaction model, a processed surface of a workpiece including a protection film layer and a reaction layer in the surface reaction model

Methodology Applied
Scientific EffectFlux calculation:

Data Source

PatentUS10403516B2Etching characteristic estimation method, program, information processing apparatus, processing apparatus, designing method, and production method
Publication Date: 2019.09.03 SONY SEMICON SOLUTIONS CORP
  • US10403516B2 patent drawing
  • US10403516B2 patent drawing
  • US10403516B2 patent drawing

AI summary

Etching characteristics in a case where a workpiece contains a nitrogen compound and an etching gas such as a CHxFy-based gas contains hydrogen are obtained. In a flux calculation step, an information processing apparatus calculates a plurality of fluxes in a surface reaction model, a processed surface of a workpiece including a protection film layer and a reaction layer in the surface reaction model. In a protection film layer calculation step, the information processing apparatus calculates a thickness of the protection film layer by using a calculation equation for calculating a thickness of an etched protection film layer based on the basis of a removal term for describing removal of the protection film layer, the removal term being selected depending on a comparison result of comparing the plurality of fluxes.