Etching Pattern Formation With a Multifunctional Organic-Inorganic Mask
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Solution Overview
Problem
Conventional semiconductor manufacturing processes require a complex four-layer structure for etching patterns, leading to increased production time, cost, and equipment investment due to conflicting properties of organic and inorganic films, which limits the integration of SiON and organic hard mask films.
Innovation Solution
A double-layer structure composed of a photoresist film and a multifunctional organic-inorganic mask film is used, where an organic carbon film and SiON film are sequentially deposited, followed by patterning with fluorine gas, to replace the conventional four-layer structure, simplifying the process and reducing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a four-layer structure (photoresist film, anti-reflective film, SiON film, organic hard mask film) is formed to achieve adequate etching resistance and pattern definition, then etching precision is improved, but device complexity and manufacturing cost increase significantly
Solution Approach 1:
The patent combines the functions of the anti-reflective film and SiON film into a single integrated layer. This merged layer maintains the etching resistance properties of SiON while eliminating the need for a separate anti-reflective film, thereby reducing structural complexity without compromising etching precision
Solution Approach 2:
The remaining layers (photoresist film and organic hard mask film) are designed to perform multiple functions. The photoresist film serves both as the patterning layer and contributes to anti-reflective properties, while the organic hard mask film provides both mechanical protection and etching resistance, reducing the overall layer count while maintaining functionality
2Manufacturing precision
If each coating film is formed with multiple processes (coating, heat treatment, exposure, development) to ensure quality, then manufacturing precision is improved, but production time increases
Solution Approach 1:
The patent reduces the number of separate coating films from four to two, which directly reduces the number of coating, heat treatment, and other processing steps required. This merging approach maintains film quality through optimized processes while significantly reducing total production time
3Reliability
If the thickness of inorganic film is increased to replace organic hard mask film, then etching resistance is improved, but the inorganic film may crack during heat treatment or become non-uniform
Solution Approach 1:
The patent optimizes the thickness parameter of the SiON film to a specific range that provides adequate etching resistance while avoiding the crack and uniformity issues associated with excessive thickness. This parameter optimization balances etching protection with structural integrity during heat treatment
Solution Approach 2:
The patent uses a composite structure combining organic and inorganic materials in the remaining layers. This composite approach leverages the advantages of both material types - the organic components provide flexibility and crack resistance, while the inorganic SiON provides etching resistance, achieving both reliability and stability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces production time and cost by eliminating the need for expensive equipment and materials, while maintaining adequate etching resistance and uniformity without surface defects, thus simplifying the semiconductor manufacturing process.
Implementation Method 1
an organic carbon film and SiON film are sequentially deposited
Implementation Method 2
followed by patterning with fluorine gas
Data Source
AI summary
The present disclosure relates to a method of forming an etching pattern in a semiconductor manufacturing process. Unlike a conventional method of forming a four-layer structure composed of a photoresist film, an anti-reflective film, a SiON film, and an organic hard mask film on a wafer, as preparation for an etching process, the method according to the present disclosure is an innovative etching pattern forming method capable of implementing the same etching pattern as is formed by the conventional method, using a double-layer structure composed of a photoresist film and a multifunctional organic-inorganic mask film.