Etching Solution for Display Metal Layers
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Solution Overview
Problem
In semiconductor manufacturing, existing etching solutions often result in metal layer patterns with steep angles, making subsequent layers vulnerable to cleavage or breakage due to high etching rates and uneven profiles.
Innovation Solution
An etching solution comprising hydrogen peroxide, succinic acid, malonic acid, acetic acid, sulfuric acid, 1-amino-2-propanol, 5-amino-1H-tetrazole, N,N,N′,N′-tetrakis(2-hydroxypropyl) ethylenediamine (EDTP), glycine, and optionally sodium dioctyl sulfosuccinate or sodium phenolsulfonate in deionized water, which forms lateral sides with included angles of 60 degrees or less, ensuring a gentle and smooth slope.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If existing etching solutions are used to increase etching rate, then productivity is improved, but the metal layer forms steep angles making subsequent layers vulnerable to cleavage or breakage
Solution Approach 1:
The patent modifies the chemical composition parameters of the etching solution by incorporating specific organic acids (succinic acid, malonic acid, acetic acid) and chelating agents (EDTP, glycine) in controlled concentrations. These parameter changes alter the etching mechanism to produce gentler slopes while maintaining efficient etching rates, thereby resolving the contradiction between productivity and structural integrity.
Solution Approach 2:
The etching solution employs a composite chemical system combining multiple acids (hydrogen peroxide, succinic acid, malonic acid, acetic acid, sulfuric acid) with chelating agents (1-amino-2-propanol, 5-amino-1H-tetrazole, EDTP, glycine). This composite formulation works synergistically to achieve both high etching efficiency and controlled profile formation, preventing subsequent layer breakage while maintaining productivity.
2Productivity
If high etching rate is achieved, then manufacturing efficiency is improved, but manufacturing precision deteriorates due to uneven profiles and steep angles
Solution Approach 1:
The patent adjusts key chemical parameters including pH control through buffer systems (acetic acid/sodium acetate), chelating agent concentrations (EDTP 1-10 wt%, glycine 0.1-5 wt%), and oxidizing agent strength (hydrogen peroxide 1-10 wt%). These parameter modifications enable the etching process to maintain uniform profile formation even at high etching rates, simultaneously improving manufacturing efficiency and precision.
3Speed
If steep angles are formed in metal layer, then etching speed is improved, but subsequent layers become more vulnerable to cleavage or breakage
Solution Approach 1:
The patent controls the etching kinetics by adjusting the concentration and strength of the oxidizing agent (hydrogen peroxide 1-10 wt%) and organic acids. This parameter optimization allows the etching process to proceed at high speed while forming gentler angles (30-60 degrees) that provide mechanical support to subsequent layers, preventing cleavage or breakage during handling and processing.
Solution Approach 2:
The chelating agents (EDTP, glycine, 1-amino-2-propanol) act as intermediaries that modulate the interaction between the etching solution and metal layer. These intermediaries control the etching front propagation to form gentler slopes, ensuring that high etching speed does not compromise the structural strength and resistance to cleavage of subsequent layers.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively controls etching rates and shapes, reducing the vulnerability of subsequent layers to cleavage or breakage by forming stable metal complexes and maintaining oxidizing agent activity, resulting in uniform and reliable etching processes.
Implementation Method 1
hydrogen peroxide is in an amount of 5-10 wt % of the etching solution
Implementation Method 2
succinic acid is in an amount of 0.5-10 wt % of the etching solution, malonic acid is in an amount of 0.5-10 wt % of the etching solution, acetic acid is in an amount of 1-10 wt % of the etching solution
Data Source
AI summary
An etching solution and a manufacturing method of a display are provided. The etching solution includes hydrogen peroxide (H2O2), succinic acid, malonic acid, acetic acid, sulfuric acid, 1-amino-2-propanol, 5-amino-1H-tetrazole, N,N,N′N′-tetrakis(2-hydroxypropyl) ethylenediamine (EDTP) and glycine homogenously mixed in deionized water. Hydrogen peroxide is in an amount of 5-10 wt % of the etching solution, succinic acid is in an amount of 0.5-10 wt % of the etching solution, malonic acid is in an amount of 0.5-10 wt % of the etching solution, acetic acid is in an amount of 1-10 wt % of the etching solution, sulfuric acid is in an amount of 0.5-5 wt % of the etching solution, 1-amino-2-propanol is in an amount of 1-20 wt % of the etching solution, 5-amino-1H-tetrazole is in an amount of 0.01-0.5 wt % of the etching solution, EDTP is in an amount of 1-15 wt % of the etching solution, and glycine is in an amount of 1-5 wt % of the etching solution.