Processing Container Etching Time Control for Temperature Variation
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Solution Overview
Problem
In semiconductor processing, it is challenging to control the etching process for removing films deposited inside processing containers at room temperature due to variations in temperature, leading to over-etching or film residue, as the etching rate changes with temperature and precise temperature control is difficult across all apparatuses.
Innovation Solution
A control device that calculates the etching time based on the actual temperature inside the processing container, using relationship information between temperature and etching rate, and cumulative film thickness, to accurately manage the cleaning process and prevent over-etching or film residue.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the cleaning process is performed by supplying cleaning gas into the processing container heated to a predetermined temperature, then the deposited film can be removed, but over-etching or film residue occurs due to temperature variations
Solution Approach 1:
The invention changes the parameter from fixed temperature cleaning to variable temperature cleaning based on actual measurements. The system measures the actual temperature inside the processing container and adjusts the etching time according to the temperature-etching rate relationship, allowing the cleaning process to adapt to temperature variations and prevent over-etching or film residue
Solution Approach 2:
The invention implements a feedback mechanism where the actual temperature inside the processing container is measured and used to adjust the etching time. The system continuously monitors temperature and uses this information to calculate the appropriate etching time based on pre-stored temperature-etching rate relationships, ensuring consistent cleaning results despite temperature fluctuations
2Ease of operation
If the etching time is fixed, then the cleaning process is simple to operate, but over-etching or film residue occurs due to temperature variations
Solution Approach 1:
The system performs self-adjustment by automatically measuring the temperature and calculating the appropriate etching time based on pre-stored relationships. The control device autonomously determines the optimal etching parameters without requiring manual intervention, maintaining ease of operation while achieving precise cleaning results
Solution Approach 2:
The invention performs preliminary action by pre-storing the temperature-etching rate relationships and film thickness information before the cleaning process. This allows the system to quickly calculate the optimal etching time during operation without complex real-time computations, maintaining operational simplicity while ensuring precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively suppresses over-etching and film residue by adjusting the etching time according to the measured temperature, ensuring precise control during the cleaning process, even in temperature ranges where control is difficult, such as at or near room temperature.
Implementation Method 1
a temperature acquisition unit configured to acquire a temperature inside the processing container
Implementation Method 2
relationship information indicating a relationship between the temperature inside the processing container and an etching rate
Implementation Method 3
a time calculator configured to calculate an etching time for removing the deposited film based on the etching rate calculated by the rate calculator and the film thickness information stored in the storage unit
Data Source
AI summary
A control device controls an operation of a processing apparatus for performing a processing in a processing container that accommodates a substrate. The control device includes: a temperature acquisition unit configured to acquire a temperature inside the processing container; a storage unit configured to store relationship information indicating a relationship between the temperature inside the processing container and an etching rate, and film thickness information including a cumulative film thickness of a deposited film inside the processing container; a rate calculator configured to calculate an etching rate of the deposited film based on the temperature acquired by the temperature acquisition unit and the relationship information stored in the storage unit; and a time calculator configured to calculate an etching time for removing the deposited film based on the etching rate calculated by the rate calculator and the film thickness information stored in the storage unit.