Ether-Based Modifier for Semiconductor Step Coverage
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Solution Overview
Problem
As semiconductor devices are downscaled, maintaining high step coverage for thin layers becomes increasingly difficult due to higher aspect ratios and complex process conditions, necessitating a method to form material layers with good step coverage despite variations in process parameters.
Innovation Solution
A method involving the use of a substrate in a reaction chamber, where a source material and an ether-based modifier are provided, followed by purging and reacting with a reaction material to form a material layer, which can include multiple cycles of source material and modifier application to achieve stable step coverage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional thin layer formation methods are used, then manufacturing process is simple, but step coverage deteriorates due to high aspect ratios
Solution Approach 1:
An ether-based modifier is introduced as an intermediary substance between the source material and the substrate. The modifier adsorbs onto the substrate surface and facilitates the decomposition and reaction of the source material, enabling conformal deposition even in high aspect ratio structures where conventional methods fail to achieve good step coverage.
Solution Approach 2:
The invention changes the chemical parameters of the deposition process by introducing the ether-based modifier with specific molecular structure (R-O-R′ where R and R′ are alkyl, alkenyl, aryl, or heterocycloalkyl groups). This parameter change enables the source material to decompose and react at lower temperatures and with better conformality, achieving good step coverage in high aspect ratio structures.
2Manufacturing precision
If process parameters are varied to improve step coverage, then step coverage may improve, but manufacturing stability deteriorates
Solution Approach 1:
The ether-based modifier acts as a self-regulating feedback mechanism in the deposition process. It adsorbs onto the substrate surface and controls the reaction rate of the source material, ensuring consistent and stable deposition regardless of variations in other process parameters. This feedback mechanism maintains manufacturing stability while achieving good step coverage.
Solution Approach 2:
By fixing the ether-based modifier concentration and type as a controlled parameter, the invention stabilizes the deposition process. The modifier's presence creates a consistent chemical environment that compensates for variations in other parameters, thereby improving manufacturing stability while maintaining good step coverage.
3Length of moving object
If thin layers are formed to meet downscaling requirements, then device size is reduced, but step coverage deteriorates due to increased aspect ratios
Solution Approach 1:
The ether-based modifier serves as a mediator that enables thin layer formation with good step coverage. It facilitates the uniform decomposition and reaction of the source material across the substrate surface, including in high aspect ratio regions, thereby achieving conformal deposition of thin layers that would otherwise have poor step coverage.
Solution Approach 2:
The introduction of the ether-based modifier changes the chemical reaction parameters, allowing thin layers to be deposited conformally even in high aspect ratio structures. The modifier enables the source material to react at lower temperatures and with better uniformity, achieving both thin layer thickness and good step coverage simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the stable formation of material layers with good step coverage, even with variations in process parameters, improving the manufacturing of semiconductor devices by ensuring consistent layer thickness across complex structures.
Implementation Method 1
providing an ether-based modifier on the substrate
Implementation Method 2
reacting a reaction material with the source material to form the material layer
Implementation Method 3
purging an inside of the reaction chamber
Data Source
AI summary
A method of forming a material layer includes providing a substrate into a reaction chamber, providing a source material onto a substrate, the source material being a precursor of a metal or semimetal having a ligand, providing an ether-based modifier on the substrate, purging an inside of the reaction chamber, and reacting a reaction material with the source material to form the material layer.