Ether-Ligand Organotin Coatings for Low-Defect EUV Patterning

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Solution Overview

Problem

Existing organotin compounds used in semiconductor manufacturing for EUV lithography face challenges in achieving high resolution patterning with low defect densities and limited process latitude due to insufficient solubility and stability of the Sn—C bond upon radiation exposure.

Innovation Solution

Incorporation of oxygen heteroatoms into hydrocarbyl ligands of organotin compounds, forming C—Sn bonds with ether structures, enhances solubility and stability, allowing for improved patterning through radiation-induced cleavage of the Sn—C bond and formation of an oxo-hydroxo network.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional organotin compounds are used for EUV lithography, then the manufacturing process can proceed with standard materials, but the patterning resolution is insufficient and defect density remains high

Engineering Contradiction:
Improvepatterning resolutionVSAvoiddefect density
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent modifies the chemical parameters of organotin compounds by incorporating oxygen heteroatoms (ether ligands) into the hydrocarbyl groups. This chemical parameter change enhances both the solubility in polar solvents and the radiation sensitivity to EUV radiation, enabling higher patterning resolution and lower defect densities simultaneously

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The invention creates composite organotin compositions by combining tin atoms with hydrocarbyl groups containing oxygen heteroatoms (ether ligands). This composite structure provides synergistic effects where the ether ligands improve both solubility properties and radiation-induced thermolysis, resolving the contradiction between patterning quality and defect reduction

Inventive Principle:
Principle #40Composite materials

2Productivity

If organotin compounds with improved radiation sensitivity are developed, then patterning efficiency increases, but the solubility in polar solvents becomes limited

Engineering Contradiction:
Improvepatterning efficiencyVSAvoidsolubility in polar solvents
Core Design Contradiction:
ProductivityVSEase of operation

Solution Approach 1:

By changing the chemical structure parameter of the hydrocarbyl ligands to include oxygen heteroatoms (ether groups), the patent simultaneously improves solubility in polar solvents and radiation sensitivity. The ether oxygen atoms provide polarity for better solubility while the modified hydrocarbyl groups enhance radiation-induced thermolysis efficiency

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent introduces oxygen heteroatoms at specific locations within the hydrocarbyl groups (as ether ligands R1-O-R2 where R2 is bonded to Sn). This localized modification provides polar character for solubility while maintaining the radiation-sensitive Sn-C bonds, resolving the contradiction between solubility and radiation sensitivity

Inventive Principle:
Principle #3Local quality

3Manufacturing precision

If higher radiation doses are used for pattern formation, then pattern completeness improves, but the defect density increases and manufacturing precision decreases

Engineering Contradiction:
Improvepattern completenessVSAvoidradiation-induced defects
Core Design Contradiction:
Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

The patent changes the radiation sensitivity parameter of the organotin compounds through ether ligand incorporation. This enables complete pattern formation at lower radiation doses because the modified compounds undergo more efficient radiation-induced thermolysis and bond cleavage, reducing the harmful cumulative effects of high radiation exposure

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent converts the previously harmful effect of requiring high radiation doses (which caused defects) into a benefit by designing compounds with enhanced radiation sensitivity. The ether-containing hydrocarbyl groups are specifically engineered to undergo controlled decomposition at lower doses, turning the radiation exposure from a harmful necessity into a controlled, efficient patterning tool

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The introduction of oxygen heteroatoms improves solubility in polar solvents, reduces defects, and enhances patterning resolution and sensitivity to EUV radiation, leading to smoother patterns and reduced defects in semiconductor manufacturing.

Implementation Method 1

L is a hydrolysable ligand

Methodology Applied
Scientific EffectHydrolysis: Hydrolysis

Implementation Method 2

high EUV absorption

Methodology Applied
Scientific EffectAbsorption (EM radiation): Absorption (EM radiation)

Implementation Method 3

radiation-induced thermolysis

Methodology Applied
Scientific EffectThermolysis: Thermolysis

Data Source

PatentUS12630737B2Radiation sensitive organotin compositions having oxygen heteroatoms in hydrocarbyl ligand
Publication Date: 2026.05.19 INPRIA CORP
  • US12630737B2 patent drawing
  • US12630737B2 patent drawing
  • US12630737B2 patent drawing

AI summary

Organotin compositions having the formula RSnL3 and corresponding synthetic methods are described. R includes aromatic, cyclic and/or halogenated ether moieties, or polyethers, and L includes hydrolysable groups. The organotin compositions may be formed as radiation-patternable coatings on substrates. The coatings may have an average thickness from about 1 nm to about 75 nm and have the formula RSnOn(OH)3-2n, forming an oxo-hydroxo network, where R is a hydrocarbyl ether group with 1 to 30 carbon atoms and 0<n<3/2, wherein regions of the coating are soluble in 2-heptanone in a puddle development step following a bake at 150° C. for 120 seconds. The coatings may be radiation-patternable using UV, EUV or ion beam radiation, and corresponding methods are described.