EUV Photoresist Absorber Layer for Reduced Exposure Time
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Solution Overview
Problem
Existing EUV photoresist patterning methods face limitations due to low EUV photon flux and long exposure times, resulting in inadequate exposure of photo-sensitive materials and increased costs for forming small pattern features.
Innovation Solution
Development of a photoresist absorber layer with high EUV sensitivity, formed using elements like Mg, Na, and Al, which have a high photoabsorption cross section on a mass basis and low absorption on a mole basis, allowing for reduced EUV dosages and faster exposure times through cyclical deposition processes like atomic layer deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional photoresist materials are used with EUV radiation, then pattern features can be formed, but the exposure time becomes excessively long and the EUV dosage requirement is high
Solution Approach 1:
The patent changes the chemical composition parameters of the photoresist material by incorporating specific compounds (e.g., compounds with carbonyl groups, cyclic carbonate structures) that have enhanced EUV absorption coefficients. This parameter change in material composition directly reduces the required EUV dosage and exposure time while maintaining pattern formation capability
Solution Approach 2:
The patent creates a composite photoresist system by combining multiple functional components: the base photoresist polymer, EUV-absorbing compounds (such as metal oxides or organic molecules with high EUV cross-section), and additives that enhance contrast. This composite approach achieves both high EUV sensitivity and adequate contrast for pattern formation
2Manufacturing precision
If conventional photoresist materials are used with EUV radiation, then pattern features can be formed, but the EUV dosage requirement becomes excessively high
Solution Approach 1:
The patent modifies the energy absorption parameters of the photoresist by selecting compounds with high EUV photoabsorption cross-sections. Specific molecular structures (e.g., those containing C=O groups, aromatic rings, or metal-containing moieties) are chosen to maximize EUV photon absorption efficiency, thereby reducing the total EUV energy dosage required
Solution Approach 2:
The patent develops a composite material system where EUV-absorbing agents are integrated into the photoresist matrix. These agents (such as bismuth subcarbonate, metal oxides, or specially designed organic molecules) have high EUV absorption coefficients, enabling the composite material to achieve the required contrast with lower EUV dosage
3Reliability
If the photoresist sensitivity to EUV is low, then adequate contrast between exposed and unexposed areas is achieved, but the exposure time and EUV dosage increase
Solution Approach 1:
The patent optimizes the photoresist formulation by adjusting the concentration and type of EUV-absorbing compounds to achieve the optimal balance between sensitivity and contrast. The molecular structure parameters of the photoactive compounds are specifically tuned to provide high EUV absorption while maintaining the chemical amplification mechanism necessary for adequate contrast
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The high-sensitivity absorber layer enables the formation of features with small critical dimensions at lower costs and increased throughput by reducing EUV dosage requirements and exposure times during photoresist patterning.
Implementation Method 1
the absorber layer includes an element having a photoabsorption cross section at 91.5 eV
Implementation Method 2
formed using a cyclical process, such as atomic layer deposition or plasma-enhanced atomic layer deposition
Data Source
AI summary
Methods of forming structures including a photoresist absorber layer and structures including the photoresist absorber layer are disclosed. Exemplary methods include forming the photoresist absorber layer that includes an element having a relatively high extreme ultraviolet (EUV) sensitivity on a mass basis while having a relatively low EUV sensitivity on a mole basis.