EUV Photolithography Buffer Fluid Contamination Control

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Solution Overview

Problem

Extreme ultraviolet photolithography systems face contamination issues due to the accumulation of material from droplets on sensitive components, leading to reduced performance and frequent replacement of expensive components.

Innovation Solution

A photolithography system that dynamically adjusts the flow of a buffer fluid into the EUV generation chamber to prevent and remove contamination, using a fluid distributor with multiple inlets and controlled mass flow controllers to ensure even distribution and removal of accumulated material, and employs sensors and a control circuit to optimize buffer fluid flow based on contamination levels.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If droplets are irradiated with laser beam to generate extreme ultraviolet light, then small feature sizes can be produced, but contamination accumulates on sensitive components

Engineering Contradiction:
Improvefeature sizeVSAvoidcontamination
Core Design Contradiction:
Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

A buffer gas (intermediary substance) is introduced between the droplet plasma source and the collector mirror to prevent direct contamination. The buffer gas creates a protective atmosphere that reduces material deposition on sensitive optical components while allowing EUV light generation to continue

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The system creates an inert buffer gas environment in the EUV generation chamber to prevent contamination accumulation. The buffer gas maintains a controlled atmosphere that minimizes harmful interactions between plasma byproducts and sensitive components, reducing contamination without affecting the EUV generation process

Inventive Principle:
Principle #39Inert atmosphere (Inert environment)

2Productivity

If collector mirror is used to reflect extreme ultraviolet light, then light can be directed to scanner, but contamination reduces reflectivity and requires frequent replacement

Engineering Contradiction:
Improvelight reflection efficiencyVSAvoidcomponent lifespan
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The buffer gas is introduced before significant contamination can occur on the collector mirror, preventing deposit accumulation proactively. This preliminary protective action maintains mirror reflectivity and extends component life by preventing contamination before it degrades performance

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The buffer gas acts as an intermediary protective layer between the plasma source and collector mirror, reducing direct contamination exposure and extending the operational life of the expensive collector mirror while maintaining its reflective properties

Inventive Principle:
Principle #24Intermediary (Mediator)

3Object-affected harmful factors

If buffer fluid flow is increased to remove contamination, then contamination is reduced, but system complexity increases

Engineering Contradiction:
Improvecontamination levelVSAvoidfluid control system
Core Design Contradiction:
Object-affected harmful factorsVSDevice complexity

Solution Approach 1:

The system incorporates sensors that monitor contamination levels and provide feedback to the control circuit, which automatically adjusts buffer gas flow rates. This closed-loop feedback control maintains optimal contamination reduction while avoiding excessive system complexity through automated regulation

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The system uses automated sensors and control circuits to self-regulate buffer gas flow based on actual contamination conditions, eliminating the need for manual intervention and reducing operational complexity while maintaining effective contamination control

Inventive Principle:
Principle #25Self-service

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively reduces contamination, maintains adequate EUV radiation, and decreases the frequency of replacing sensitive components, thereby enhancing process effectiveness and reducing operational costs.

Implementation Method 1

irradiating droplets of selected materials with a laser beam. The energy from the laser beam causes the droplets to enter a plasma state. In the plasma state, the droplets emit extreme ultraviolet light.

Methodology Applied
Scientific EffectLaser-induced plasma generation: Laser

Implementation Method 2

The energy from the laser beam causes the droplets to enter a plasma state. In the plasma state, the droplets emit extreme ultraviolet light.

Methodology Applied
Scientific EffectPlasma emission: Plasma

Implementation Method 3

The extreme ultraviolet light travels toward a collector with an elliptical or parabolic surface. The collector reflects the extreme ultraviolet light to a scanner.

Methodology Applied
Scientific EffectLight reflection: Reflection

Data Source

PatentUS12174545B2System and method for performing extreme ultraviolet photolithography processes
Publication Date: 2024.12.24 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US12174545B2 patent drawing
  • US12174545B2 patent drawing
  • US12174545B2 patent drawing

AI summary

A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become a plasma and emit extreme ultraviolet radiation. The photolithography system senses contamination of a collector mirror by the tin droplets and adjusts the flow of a buffer fluid to reduce the contamination.