Patterned Carbon Layer Formation Using EUV Photo-Electron Catalysis
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Solution Overview
Problem
Current methods for forming patterned graphene layers in semiconductor devices face challenges in achieving high accuracy, speed, and cost-effectiveness, particularly with extreme ultraviolet (EUV) lithography, which requires thin resist layers that are prone to defects and have limited photon absorption due to high aspect ratios and shot noise.
Innovation Solution
A method involving the irradiation of a solid structure with extreme ultraviolet radiation in the presence of a carbon-containing precursor, generating photo-electrons that catalyze the formation of a patterned carbon layer without the need for high-temperature techniques or separate deposition steps, allowing for high spatial resolution and efficient processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If EUV lithography is used to form patterned graphene layers, then spatial resolution is improved, but the process becomes complex requiring resist overlayers and separate deposition steps
Solution Approach 1:
The patent combines the deposition and patterning steps into a single simultaneous process. Graphene is deposited and patterned in one step by controlling the carbon precursor flux during EUV irradiation, eliminating the need for separate deposition and lithography steps. This merging of operations directly reduces process complexity while maintaining high spatial resolution.
Solution Approach 2:
The invention extracts and eliminates the resist overlayer from the process. By using EUV-induced decomposition of carbon precursors directly on the substrate, the method forms patterned graphene without requiring any resist materials, simplifying the overall process and reducing the number of steps required.
2Quantity of substance
If conventional CVD or silicon sublimation is used, then graphene can be formed, but high temperatures are required which complicates the process
Solution Approach 1:
The patent replaces thermal energy with electromagnetic radiation energy. Instead of using high-temperature heating to drive carbon decomposition and graphene formation, the method uses EUV photons to directly decompose carbon precursors and induce graphene deposition at lower temperatures, fundamentally changing the energy input mechanism.
Solution Approach 2:
The invention changes the energy parameter from thermal to photonic. By switching from temperature-driven thermal decomposition to EUV-photon-driven photodecomposition, the process operates at significantly lower temperatures while achieving the same graphene formation objective, thereby resolving the temperature contradiction.
3Manufacturing precision
If thin resist layers are used in EUV lithography, then high aspect ratio features are avoided, but photon absorption is reduced leading to defects
Solution Approach 1:
The patent converts the potentially harmful effect of thin layer photon absorption into a beneficial process feature. By using EUV radiation to directly decompose carbon precursors in situ, the method achieves efficient pattern formation without requiring thick resist layers, turning the absorption challenge into a direct decomposition advantage that eliminates the need for thick resists while maintaining reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of patterned carbon layers, such as graphene, with improved throughput and precision, reducing the need for resist overlayers and separate deposition steps, while enhancing processing flexibility and minimizing defects associated with EUV lithography.
Implementation Method 1
the radiation interacts with the solid structure in the selected portion to cause formation of a layer of carbon in the selected portion from the carbon-containing precursor
Data Source
AI summary
Methods and apparatus for forming a patterned layer of carbon are disclosed. In one arrangement, a selected portion of a surface of a solid structure is irradiated with extreme ultraviolet radiation in the presence of a carbon-containing precursor. The radiation interacts with the solid structure in the selected portion to cause formation of a layer of carbon in the selected portion from the carbon-containing precursor. The layer of carbon is formed in a pattern defined by the selected portion.