EUV Wafer Chuck Particle Removal Using a Spinning Bi-Polar Electrode
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Solution Overview
Problem
The use of electrostatic chucks in semiconductor manufacturing leads to particle contamination on the substrate chuck surface, causing heat transfer gas leakage and reducing temperature control and substrate cooling efficiency, necessitating frequent and costly manual cleaning, resulting in down-time.
Innovation Solution
A bi-polar spinning electrode is used to remove both positively and negatively charged debris particles from the electrostatic chuck surface by generating a symmetric electric field, which adsorbs particles without physical contact, complemented by a stone cleaning process to address larger debris.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If electrostatic chuck is used to hold substrate, then mechanical clamp rings are eliminated and particle formation by abrasion is reduced, but small debris particles are still formed over time and other contamination is generated within the process chamber
Solution Approach 1:
The patent replaces manual mechanical cleaning operations with an automated plasma-based cleaning system. The plasma cleaning apparatus uses reactive ions to chemically react with and remove contaminants from the electrostatic chuck surface, eliminating the need for manual intervention and reducing particle generation while maintaining effective cleaning.
Solution Approach 2:
The patent changes the cleaning approach by utilizing plasma physics parameters (ion energy, plasma composition, power density) to optimize contaminant removal. By adjusting plasma parameters, the system effectively removes both large and small particles without damaging the electrostatic chuck surface or generating excessive debris.
2Loss of energy
If particles and contamination are present on substrate chuck surface, then heat transfer gas leakage increases, but frequent cleaning is required which results in down-time and requires expensive manual cleaning operation
Solution Approach 1:
The plasma cleaning system is designed to be self-service capable, automatically cleaning the electrostatic chuck surface without requiring manual intervention. The system can be integrated into the existing process chamber, allowing continuous operation with automated contaminant removal, thereby eliminating productivity loss associated with manual cleaning downtime.
Solution Approach 2:
The patent enables continuous cleaning operation through automated plasma treatment, eliminating interruptions for manual cleaning. The plasma cleaning can be performed between substrate processing steps or as a continuous maintenance cycle, ensuring the electrostatic chuck surface remains clean and functional without apparatus down-time.
3Object-affected harmful factors
If manual cleaning operation is performed, then particle contamination is removed, but it is expensive and time consuming resulting in down-time
Solution Approach 1:
The patent replaces manual mechanical cleaning with automated plasma-based chemical cleaning. The plasma reactive ions chemically react with contaminants to volatilize or detach them from the surface, achieving effective cleaning without manual labor and significantly reducing cleaning time while eliminating associated downtime.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces particle contamination, maintaining substrate temperature control and cooling efficiency, minimizing down-time, and enhancing manufacturing performance by automatically removing both large and small debris particles.
Implementation Method 1
A bi-polar spinning electrode is used to remove both positively and negatively charged debris particles from the electrostatic chuck surface by generating a symmetric electric field, which adsorbs particles without physical contact
Data Source
AI summary
Cleaning equipment for an EUV wafer chuck or clamp, which removes particles that have accumulated between burls on the surface of the wafer chuck. The equipment includes a spinning bi-polar electrode placed in proximity to the surface, which can attract and adsorb the charged particle residue therefrom using its generated symmetric electric field when the wafer chuck is not in use.