EUV Contamination Trap with Dynamic Thermal Control

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Solution Overview

Problem

The accumulation of contamination particles on reflective surfaces of lithographic apparatuses reduces their reflectivity and throughput, particularly when using extreme ultraviolet (EUV) radiation sources that generate plasma, leading to undesired debris formation.

Innovation Solution

A contamination trap arrangement with vanes, a heating arrangement, a cooling arrangement, and a gap between them, where the cooling arrangement is in thermal communication with the vanes via the heating arrangement, and a heat transfer adjustment mechanism to control the heat transfer characteristics of a fluid inside the gap, allowing for controllable relative movement between the surfaces defining the gap.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Use of energy by moving object

If a plasma source is used to generate EUV radiation, then the radiation source can produce extreme ultraviolet radiation for lithography, but contamination particles are created as a by-product that adhere to reflective surfaces and reduce reflectivity

Engineering Contradiction:
ImproveEUV radiation generationVSAvoidcontamination particles
Core Design Contradiction:
Use of energy by moving objectVSObject-generated harmful factors

Solution Approach 1:

The patent extracts the harmful contamination particles from the plasma generation environment by introducing a contamination trap with vanes that selectively capture debris particles. The trap removes these particles before they can adhere to reflective surfaces, separating the harmful by-product from the useful EUV radiation generation process.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The contamination trap acts as an intermediary component between the plasma source and the reflective surfaces. It intercepts contamination particles in the path, preventing direct contact with mirrors and other optical components, thereby protecting the reflective surfaces while allowing the plasma source to continue generating EUV radiation.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Duration of action of stationary object

If contamination particles accumulate on reflective surfaces, then the plasma source can continue operating, but the reflectivity of surfaces reduces and throughput decreases

Engineering Contradiction:
Improveplasma source operationVSAvoidthroughput
Core Design Contradiction:
Duration of action of stationary objectVSProductivity

Solution Approach 1:

The contamination trap continuously extracts contamination particles from the plasma environment, preventing their accumulation on reflective surfaces. This maintains surface reflectivity over time, ensuring consistent throughput and productivity without requiring interruptions for cleaning or maintenance.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The trap enables continuous operation of the plasma source by constantly removing contamination particles. This uninterrupted removal process maintains the reflectivity of optical surfaces, allowing the lithographic apparatus to operate at optimal throughput levels continuously without degradation from particle accumulation.

Inventive Principle:
Principle #20Continuity of useful action

3Object-generated harmful factors

If the vanes are heated to prevent tin solidification, then contamination particles can be effectively removed, but heat transfer control becomes critical to maintain desired temperature range

Engineering Contradiction:
Improvecontamination particle removalVSAvoidvane temperature control
Core Design Contradiction:
Object-generated harmful factorsVSTemperature

Solution Approach 1:

The patent implements dynamic temperature control of the vanes through adjustable heating arrangements. The heating power can be dynamically adjusted based on operating conditions, allowing the system to maintain optimal temperatures for contaminant removal while preventing excessive heat accumulation. This dynamic control enables adaptation to varying plasma source conditions.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The system controls the temperature parameter of the vanes by adjusting heating power and managing heat transfer characteristics. By changing operational parameters such as heating intensity and thermal contact conditions, the system maintains tin in a non-solidified state to facilitate contamination particle removal while staying within the desired temperature range.

Inventive Principle:
Principle #35Parameter changes

4Temperature

If heat transfer characteristics are adjusted by providing controllable relative movement between surfaces, then temperature control precision improves, but device complexity increases

Engineering Contradiction:
Improveheat transfer control precisionVSAvoidheat transfer adjustment mechanism
Core Design Contradiction:
TemperatureVSDevice complexity

Solution Approach 1:

The patent introduces controllable relative movement between the surfaces defining the gap, transforming a static heat transfer interface into a dynamic one. This dynamic adjustment capability allows precise control of heat transfer characteristics by varying the degree of separation or contact between surfaces, enabling fine-tuned temperature control of the vanes.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The system adjusts the thermal contact parameter between heating and cooling arrangements by controlling the relative position of surfaces. By varying the gap distance or contact state, the heat transfer coefficient can be precisely modified, providing fine control over vane temperature without requiring complex active thermal management systems.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Effectively traps debris particles and maintains the vanes within a desired temperature range, preventing tin from solidifying and ensuring efficient removal, thereby maintaining the reflectivity and throughput of the lithographic apparatus.

Implementation Method 1

a heating arrangement configured to heat said plurality of vanes

Methodology Applied
Scientific EffectHeating: Heating

Implementation Method 2

a cooling arrangement configured to transport heat generated as a result of said plasma formation, away from said plurality of vanes

Methodology Applied
Scientific EffectHeat transport: Conduction (thermal)

Implementation Method 3

A radiation system for producing EUV radiation may include a laser for exciting a fuel to provide the plasma

Methodology Applied
Scientific EffectPlasma: Plasma

Data Source

PatentUS9494879B2Contamination trap for a lithographic apparatus
Publication Date: 2016.11.15 ASML NETHERLANDS BV
  • US9494879B2 patent drawing
  • US9494879B2 patent drawing
  • US9494879B2 patent drawing

AI summary

Disclosed is a contamination trap arrangement (300) configured to trap debris particles that are generated with the formation of a plasma within a radiation source configured to generate extreme ultraviolet radiation. The contamination trap comprises a vane structure (310) for trapping the debris particles; a heating arrangement (330) for heating the vane structure, the heating arrangement being in thermal communication with the vane structure; a cooling arrangement (350) for transporting heat generated as a result of the plasma formation, away from the vane structure, and a gap (370) between the heating arrangement and the cooling arrangement. The cooling arrangement is in thermal communication with the vane structure via the heating arrangement and the gap and the contamination trap also comprises a heat transfer adjustment arrangement operable to adjust the heat transfer characteristics of a fluid inside of the gap by providing for controllable relative movement between the surfaces defining the gap.