EUV Lithography Crosstalk Correction via Component Diffraction Modeling
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Solution Overview
Problem
EUV lithography faces challenges in correcting crosstalk effects due to the fundamental differences in physical mechanisms compared to deep ultraviolet lithography, as materials at EUV wavelengths have refractive indices close to 1.0, leading to insufficient modeling accuracy with existing techniques.
Innovation Solution
A method involving component-based mask diffraction modeling using domain decomposition methods (DDM) to determine isolated mask feature component diffraction signals and crosstalk signals, processed to correct EUV crosstalk effects through simulation and optical proximity correction, employing an electromagnetic field solver and sum-of-coherent-systems method.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If existing lithography modeling techniques are used for EUV, then the process is simpler and more compatible with deep ultraviolet lithography, but the modeling accuracy is insufficient due to fundamental differences in physical mechanisms
Solution Approach 1:
The patent segments the mask diffraction modeling into isolated component modeling and crosstalk correction. First, isolated mask feature component diffraction signals are determined using domain decomposition methods, then crosstalk signals are separately determined and applied. This segmentation allows each part to be optimized independently, improving overall modeling accuracy while managing complexity through modular processing.
Solution Approach 2:
The patent performs preliminary calculation of crosstalk signals using electromagnetic field solvers and domain decomposition methods before processing layout designs. These predetermined crosstalk signals are stored and then applied during layout processing, avoiding the need for complex real-time calculations and enabling accurate correction without excessive computational burden during actual design work.
2Measurement precision
If component-based mask diffraction modeling with domain decomposition is used, then isolated mask feature component diffraction signals can be accurately determined, but additional crosstalk correction processing is required
Solution Approach 1:
Crosstalk signals are predetermined and calculated in advance using electromagnetic field solvers and domain decomposition methods. These pre-calculated signals are stored and then simply applied during layout processing by multiplying with binary masks derived from layout data. This preliminary action eliminates the need for complex real-time crosstalk calculations, maintaining high accuracy while improving processing efficiency.
Solution Approach 2:
The patent uses binary masks that copy the layout geometry to efficiently apply crosstalk signals. By converting layout data to binary mask representations and multiplying with predetermined crosstalk signals, the system efficiently reproduces the corrected diffraction patterns without requiring complex geometric processing during layout analysis.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively corrects EUV crosstalk effects by accurately simulating and processing layout designs, improving the fidelity of image reproduction on substrates and reducing errors in advanced processing nodes.
Implementation Method 1
predetermined crosstalk signals are derived based on mask feature component diffraction signals computed using an electromagnetic field solver
Implementation Method 2
determining isolated mask feature component diffraction signals associated with individual layout feature components in the one or more layout designs based on a component-based mask diffraction modeling method
Implementation Method 3
processing the one or more layout designs based on the mask feature component diffraction signals; employing an electromagnetic field solver and sum-of-coherent-systems method
Implementation Method 4
determining mask feature component diffraction signals based on the isolated mask feature component diffraction signals, the layout data and predetermined crosstalk signals
Data Source
AI summary
Disclosed are techniques for correcting the EUV crosstalk effects. Isolated mask feature component diffraction signals associated with individual layout feature components are determined based on a component-based mask diffraction modeling method such as a domain decomposition method. Mask feature component diffraction signals are then determined based on the isolated mask feature component diffraction signals, layout data and predetermined crosstalk signals. Here, the predetermined crosstalk signals are derived based on mask feature component diffraction signals computed using an electromagnetic field solver and the component-based mask diffraction modeling method, respectively. The mask feature component diffraction signals are then used to process layout designs.