EUV Scanner Debris Detection Using Electronegative Coatings

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Contaminants from the EUV generation process accumulate on sensitive optical surfaces within the scanner, leading to corruption of photolithography processes and reduced effectiveness of integrated circuits.

Innovation Solution

Implement contamination reduction structures with a highly electronegative material coating that attracts and decomposes contaminants before they accumulate on optical surfaces, maintaining the cleanliness of the scanner and ensuring uninterrupted EUV photolithography processes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If EUV light generation process is used to produce small features, then manufacturing precision is improved, but contaminants accumulate on optical surfaces causing process corruption

Engineering Contradiction:
Improvefeature sizeVSAvoidprocess integrity
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

A detector is introduced as an intermediary component between the EUV light source and the scanner to detect contaminants before they reach and corrupt the optical surfaces. The detector acts as an early warning system that enables preventive action without interfering with the EUV photolithography process.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The system performs preliminary detection of contaminants in the EUV light path before they can accumulate on optical surfaces and cause process corruption. This advance detection allows for preventive maintenance or process adjustment before reliability degradation occurs.

Inventive Principle:
Principle #10Preliminary action

2Device complexity

If contaminants are allowed to accumulate on optical surfaces, then device complexity is reduced, but productivity decreases due to cleaning requirements

Engineering Contradiction:
Improvesystem structureVSAvoidwafer yield
Core Design Contradiction:
Device complexityVSProductivity

Solution Approach 1:

The detector provides continuous feedback about contaminant presence in the EUV light path. This feedback enables real-time monitoring and triggers alerts or automated responses when contaminant levels reach thresholds that would affect productivity, allowing for timely intervention before wafer yield decreases.

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The system performs self-monitoring through the integrated detector, automatically detecting contaminants and generating alerts without requiring external inspection or manual monitoring. This self-service capability maintains productivity by enabling rapid response to contamination events.

Inventive Principle:
Principle #25Self-service

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively reduces contamination on optical surfaces, preventing process corruption and increasing wafer yields while avoiding costly and time-consuming cleaning, thus enhancing the performance and reliability of EUV photolithography systems.

Implementation Method 1

a highly electronegative material coating that attracts and decomposes contaminants

Methodology Applied
Scientific EffectAdsorption: Adsorption

Implementation Method 2

a highly electronegative material coating that attracts and decomposes contaminants

Methodology Applied
Scientific EffectDecomposition: Decomposition (biological)

Data Source

PatentUS20250321500A1System and method for detecting debris in a photolithography system
Publication Date: 2025.10.16 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20250321500A1 patent drawing
  • US20250321500A1 patent drawing
  • US20250321500A1 patent drawing

AI summary

An extreme ultraviolet (EUV) photolithography system includes a scanner that directs the EUV light onto an EUV reticle. The photolithography system includes one or more contamination reduction structures positioned within the scanner and configured to attract and decompose contaminant particles within the scanner. The contamination reduction structure includes a surface material that is highly electronegative.