EUV Stochastic Defect Model Calibration for Complex Layouts

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Solution Overview

Problem

Existing stochastic defect prediction models in EUV lithography are impractical for complex design layouts, requiring extensive experimental data for calibration and prone to under/over prediction, especially in off-nominal operating conditions.

Innovation Solution

A method and system using a processor to receive and tune stochastic defect models by grouping defect locations into probability bins, determining consistency with observed results, and adjusting model parameters for improved accuracy using statistical metrics.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If generalized empirical models are built with extensive experimental data for calibration, then prediction accuracy is improved, but device complexity and data collection requirements worsen

Engineering Contradiction:
Improveprediction accuracyVSAvoidmodel complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent segments the complex calibration process into two distinct stages: a training stage that builds the model using simplified assumptions, and a calibration stage that uses a small amount of experimental data to adjust specific parameters. This segmentation allows the model to achieve high prediction accuracy without requiring extensive experimental data for the entire calibration process, thereby reducing overall device complexity.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent applies preliminary action by first building the empirical model using theoretical calculations and simplified experimental data before the actual calibration process. This preliminary model structure is then refined using a small amount of targeted experimental data, avoiding the need to collect extensive data from the beginning and reducing the complexity of the complete system.

Inventive Principle:
Principle #10Preliminary action

2Reliability

If models are calibrated using experimental data at nominal conditions, then prediction reliability is improved, but adaptability to off-nominal conditions worsens

Engineering Contradiction:
Improveprediction reliabilityVSAvoidadaptability to off-nominal conditions
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

The patent changes the approach by calibrationting model parameters not just at nominal conditions but across a range of process conditions. The calibration process adjusts parameters to account for variations in focus, dose, and other process parameters, enabling the model to maintain high prediction reliability across both nominal and off-nominal operating conditions, thereby improving adaptability without sacrificing reliability.

Inventive Principle:
Principle #35Parameter changes

3Productivity

If defect review is performed at discrete locations only, then inspection time is reduced, but measurement precision for defect characterization worsens

Engineering Contradiction:
Improveinspection throughputVSAvoiddefect characterization accuracy
Core Design Contradiction:
ProductivityVSMeasurement precision

Solution Approach 1:

The patent segments the inspection process into rapid screening at discrete locations using standard inspection tools, followed by targeted high-resolution analysis only at locations where defects are detected. This segmentation allows the system to maintain high throughput by not performing expensive high-resolution analysis on all locations, while still achieving precise defect characterization at the necessary locations.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent introduces an intermediary step using machine learning predictions as a mediator between the initial inspection and the final high-resolution analysis. The ML model predicts defect locations and characteristics, guiding the high-resolution inspection to only those critical locations, thus maintaining both high productivity and measurement precision.

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS12561790B2Method to calibrate, predict, and control stochastic defects in EUV lithography
Publication Date: 2026.02.24 KLA CORP
  • US12561790B2 patent drawing
  • US12561790B2 patent drawing
  • US12561790B2 patent drawing

AI summary

Using an initial probability of occurrence of a stochastic defect over an inspection area of a workpiece, one or more defects within the inspection area are imaged using an optical tool or an electron beam tool. A probability of occurrence of a stochastic defect at each of the defect locations is generated using the model. The defect locations are grouped into probability bins. A consistency between the initial probability and observed results is determined and the model can be tuned based on the consistency.