EUV Diffraction Grating Aperture Ratio for Aberration Measurement

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Solution Overview

Problem

Current aberration measurement systems for EUV lithographic systems face inaccuracies due to unwanted interference beams generated by pinhole arrays, leading to errors in wavefront reconstruction and system performance.

Innovation Solution

A two-dimensional diffraction grating with a specific geometry, featuring a ratio of circular aperture radius to center-to-center distance between 0.34 and 0.38, is used to minimize gain and cross-talk errors in aberration map reconstruction, reducing the number of interference beams contributing to the phase stepping signal.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If a pinhole array is used in the diffraction grating, then the device can be manufactured with standard techniques, but unwanted interference beams are generated that reduce measurement precision

Engineering Contradiction:
ImprovemanufacturabilityVSAvoidaberration measurement accuracy
Core Design Contradiction:
Ease of manufactureVSMeasurement precision

Solution Approach 1:

The patent applies parameter changes by optimizing the ratio of aperture diameter to pitch (distance between adjacent apertures) to fall within the specific range of 0.34 to 0.38. This parameter optimization minimizes the generation of unwanted interference beams while maintaining manufacturability through standard pinhole array fabrication techniques, thereby resolving the contradiction between ease of manufacture and measurement precision

Inventive Principle:
Principle #35Parameter changes

2Quantity of substance

If the aperture pitch is reduced to increase aperture density, then more diffraction beams are captured, but gain errors and cross-talk errors increase in the aberration reconstruction

Engineering Contradiction:
Improveaperture densityVSAvoidaberration reconstruction accuracy
Core Design Contradiction:
Quantity of substanceVSMeasurement precision

Solution Approach 1:

The patent resolves this contradiction by optimizing the aperture pitch and aperture diameter parameters simultaneously. The specific ratio range of 0.34 to 0.38 ensures that apertures are densely packed to capture sufficient diffraction beams while maintaining proper spacing to minimize gain errors and cross-talk errors in the wavefront reconstruction algorithm

Inventive Principle:
Principle #35Parameter changes

3Device complexity

If a traditional diffraction grating geometry is used, then the device complexity is low, but the number of interference beams contributing to the phase stepping signal is high, reducing measurement accuracy

Engineering Contradiction:
Improvegrating structure simplicityVSAvoidphase stepping signal accuracy
Core Design Contradiction:
Device complexityVSMeasurement precision

Solution Approach 1:

The patent maintains the simple two-dimensional array geometry of traditional diffraction gratings (avoiding complex structures) while optimizing the critical parameters of aperture diameter and pitch ratio to 0.34-0.38. This parameter optimization reduces the number of unwanted interference beams in the phase stepping signal without increasing device complexity, as the fundamental grating structure remains unchanged

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enhances the accuracy of aberration measurement by reducing gain and cross-talk errors, improving imaging, overlay, and focus performance in EUV lithographic systems.

Implementation Method 1

The reticle level patterning device is illuminated with radiation to form a plurality of first diffraction beams, the first diffraction beams being separated in a shearing direction

Methodology Applied
Scientific EffectDiffraction: Diffraction

Implementation Method 2

The projection system at least partially captures the plurality of first diffraction beams and images these onto the patterning device of the wafer level sensor

Methodology Applied
Scientific EffectOptical projection: Lens

Implementation Method 3

A measurement system for determining an aberration map for a projection system may be used to measure aberrations caused by the projection system. Such a measurement system may be used within a lithographic apparatus and may comprise a shearing interferometer

Methodology Applied
Scientific EffectInterference: Interference

Data Source

PatentUS20240385356A1Diffraction grating for measurements in EUV-exposure apparatuses
Publication Date: 2024.11.21 ASML NETHERLANDS BV
  • US20240385356A1 patent drawing
  • US20240385356A1 patent drawing
  • US20240385356A1 patent drawing

AI summary

Diffraction gratings for a phase-stepping measurement system for determining an aberration map for a projection system are disclosed. The gratings are two-dimensional diffraction gratings for use as wafer level gratings in an EUV lithographic apparatus. In particular, the diffraction gratings include a substrate provided with a two-dimensional array of circular through-apertures and are self-supporting. In some embodiments, a ratio of the radius of the circular apertures to the distance between the centers of adjacent apertures may be selected to minimize the gain and cross-talk errors of a wavefront reconstruction algorithm. For example, the ratio may be between 0.34 and 0.38. In some embodiments, the circular apertures are distributed such that a distance between the centers of adjacent apertures is non-uniform and varies across the diffraction grating. For example, a local pitch of the grating may vary randomly across the diffraction grating.