EUV-Driven Deposition for Patterned Atomic Monolayers
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Solution Overview
Problem
Semiconductor manufacturing faces challenges in achieving uniformity and accuracy in forming small features due to chemical noise and defects introduced during photo-resist etching and stripping processes, particularly in the fabrication of tunnelling FETs which require patterned stacks of atomic monolayers like MoS2.
Innovation Solution
The method involves irradiating a substrate with electromagnetic radiation of less than 100 nm wavelength during a deposition process to locally drive the deposition, forming a patterned layer without the need for resist, using EUV radiation to enhance resolution and reduce chemical noise, and potentially using immersion lithography to control the environment and facilitate high-throughput atomic layer deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If lithography with photo-resist is used for patterning, then features can be formed, but defects are introduced into atomic monolayers during etching or stripping processes
Solution Approach 1:
The patent removes the photo-resist material from the process entirely, extracting only the essential patterning function. By using direct EUV irradiation to drive deposition in selected regions, the harmful etching and stripping steps are eliminated, preventing defects in atomic monolayers while maintaining pattern formation capability
Solution Approach 2:
The patent introduces EUV radiation as an intermediary that directly drives the deposition process in selected regions. This radiation-mediated approach replaces the mechanical and chemical actions of photo-resist-based lithography, enabling precise patterning without the need for resist materials and subsequent damaging removal processes
2Manufacturing precision
If conventional lithography processes are used, then multiple processing steps are required, but this increases process complexity and potential for errors
Solution Approach 1:
The patent merges the exposure and deposition steps into a single integrated process. EUV irradiation simultaneously defines the pattern and drives the material deposition in the desired regions, eliminating the separate steps of photo-resist application, exposure, development, and material deposition that characterize conventional lithography
Solution Approach 2:
The EUV radiation serves multiple functions: it acts as the patterning source, the energy source for driving deposition reactions, and the control mechanism for spatial selectivity. This multi-functional approach replaces multiple specialized process steps with a single versatile irradiation-driven process
3Productivity
If full substrate processing is performed simultaneously, then throughput is improved, but uniformity across the substrate becomes more challenging
Solution Approach 1:
The patent applies EUV irradiation selectively to specific regions of the substrate rather than uniformly across the entire surface. This localized irradiation approach enables different regions to receive precisely the amount of energy needed for deposition, maintaining uniformity in irradiated areas while allowing the overall substrate to be processed in parallel, thus preserving both throughput and uniformity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for high-resolution, defect-free pattern formation with improved critical dimension uniformity and edge placement accuracy, reducing the need for multiple processing steps and minimizing errors associated with chemical noise, thereby enhancing semiconductor device manufacturing efficiency.
Implementation Method 1
the irradiation being such as to locally drive the deposition process in the selected region and thereby cause the deposition process to form a layer of material in a pattern defined by the selected portion
Data Source
AI summary
Methods and apparatuses for forming a patterned layer of material are disclosed. In one arrangement, a selected portion of a surface of a substrate is irradiated with electromagnetic radiation having a wavelength of less than 100 nm during a deposition process. Furthermore, an electric field controller is configured to apply an electric field that is oriented so as to force secondary electrons away from the substrate. The irradiation locally drives the deposition process in the selected portion and thereby causes the deposition process to, for example, form a layer of material in a pattern defined by the selected portion.