Single-Chamber EUV Dry Development and Etch Pressure Switching
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Solution Overview
Problem
Current photolithography processes face challenges in achieving small feature sizes due to the wavelength limitations of UV light, and EUV processes suffer from low power output and metal cross-contamination issues, necessitating improved EUV photoresist processes for efficient material production.
Innovation Solution
Integration of dry development and etch processes in a single process chamber, utilizing pressure control and plasma processing to perform thermal and plasma dry development and etching, with rapid pressure transitions, to enhance throughput and reduce handling of wafers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If dry development and etch processes are performed in separate chambers, then process control is simpler, but wafer handling increases and productivity decreases
Solution Approach 1:
The patent combines dry development and etch processes into a single process chamber, eliminating the need for separate chambers and wafer handling steps. This merging of previously separate processes directly increases wafer productivity while managing the complexity through integrated pressure control systems.
Solution Approach 2:
The process chamber is designed to perform multiple functions - both dry development and etching - within the same chamber. This multi-functionality allows a single chamber to replace what would traditionally require multiple specialized chambers, improving throughput while maintaining process control.
2Productivity
If pressure transition is slow, then process stability is maintained, but cycle time increases and productivity decreases
Solution Approach 1:
The patent implements dynamic pressure control that can rapidly transition between different pressure states (e.g., from 100-500 mTorr for deposition to 1-10 mTorr for etching) while maintaining process stability. The system adapts pressure conditions in real-time based on the specific process step being performed, enabling fast cycle times without compromising reliability.
Solution Approach 2:
The system utilizes rapid changes in pressure parameters to switch between different process modes within the same chamber. By controlling pressure transitions to occur in 10 seconds or less, the patent achieves both high productivity and process stability through precise parameter management.
3Productivity
If post-dry development bake is performed, then outgassing is controlled, but additional process steps increase cycle time
Solution Approach 1:
The patent performs outgassing control during the etch process itself rather than requiring a separate post-dry development bake step. By incorporating the outgassing management into the etch process through plasma treatment and pressure control, the system eliminates an additional process step while still controlling outgassing effectively.
Solution Approach 2:
The system maintains continuous useful action by combining multiple functions (dry development, outgassing control, and etching) into a single continuous process sequence within the same chamber. This eliminates idle time between steps and maintains process efficiency while controlling outgassing through the plasma environment.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach increases wafer productivity and improves lithographic control by eliminating the need for post-dry development bake, reducing outgassing, and enhancing the efficiency of semiconductor manufacturing.
Implementation Method 1
perform plasma dry development and etching at a second pressure lower than the first pressure in the same process chamber
Implementation Method 2
transition pressure in the same process chamber from the first pressure to the second pressure in ten seconds or less
Data Source
AI summary
Process condition management facilitates the combination of dry development and etching into a single process chamber; eliminating the necessity for a post-dry development bake step during semiconductor manufacturing. Methods and apparatuses for rapidly instituting a large drop in process chamber pressure allow thermal dry development and an O2 flash treatment or thermal dry development and plasma hardmask open operations to take place without wafer transfer.