EUV Exposure System with UV Maskless Post-Exposure
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Solution Overview
Problem
Current EUV exposure systems face challenges in improving yield and throughput while maintaining patterning quality, due to limitations in EUV light source power and resolution, which restricts their competitiveness in semiconductor manufacturing.
Innovation Solution
Incorporating an EUV exposure system with a UV exposure apparatus that performs UV exposure on the entire wafer surface without a photomask after EUV exposure, enhancing EUV exposure performance and reducing EUV energy dose, thereby improving process speed and productivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If EUV exposure is performed using conventional EUV light sources, then patterning resolution is achieved, but exposure time and energy consumption are excessive, reducing productivity
Solution Approach 1:
The patent combines EUV exposure and UV exposure functions into a single integrated exposure apparatus. The EUV light source and UV light source are merged in one system, allowing sequential exposure of different wavelengths on the same wafer without requiring separate equipment, thereby improving throughput while maintaining patterning quality
Solution Approach 2:
The patent performs preliminary EUV exposure to form initial patterns on the photoresist layer, then follows with UV exposure to complete the patterning process. This preliminary action approach allows the system to achieve final patterning quality while reducing the total EUV exposure energy required, thereby improving productivity
2Manufacturing precision
If EUV exposure energy dose is increased to improve patterning quality, then manufacturing precision improves, but exposure time increases, reducing productivity
Solution Approach 1:
The patent segments the exposure process into two distinct stages: first EUV exposure at lower energy dose to form initial patterns, then UV exposure to complete the patterning. This segmentation allows each wavelength to perform its optimal function, achieving high patterning quality while minimizing total exposure time and EUV energy consumption
3Adaptability or versatility
If separate EUV and UV exposure apparatus are used, then exposure flexibility is improved, but device complexity and space requirements increase
Solution Approach 1:
The patent merges separate EUV and UV exposure apparatus into a single integrated system with shared components such as the wafer stage, chuck table, and control systems. This integration maintains the flexibility to perform both EUV and UV exposure with optimized parameters while reducing overall system complexity and factory floor space requirements
Solution Approach 2:
The integrated exposure apparatus is designed with universal functionality to perform both EUV and UV exposure using a single system. The apparatus can switch between different light sources and exposure modes, providing multi-functional capability that eliminates the need for separate dedicated equipment while maintaining exposure flexibility for different patterning requirements
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances EUV exposure performance, maintains patterning quality, and increases throughput by reducing EUV exposure time and energy usage, making the EUV exposure system more competitive in semiconductor manufacturing.
Implementation Method 1
an extreme ultraviolet (EUV) light source configured to emit EUV light
Implementation Method 2
an ultraviolet (UV) light source configured to emit UV light
Implementation Method 3
exposing the photoresist layer to an extreme ultraviolet light reflected by a photomask
Data Source
AI summary
An extreme ultraviolet (EUV) exposure system capable of improving the yield of an EUV exposure process by improving EUV exposure performance, and furthermore, capable of increasing throughput or productivity of the EUV exposure process, the EUV exposure system including an EUV exposure apparatus configured to perform EUV exposure on a wafer disposed on a chuck table, a load-lock chamber combined with the EUV exposure apparatus and configured to supply and discharge the wafer to/from the EUV exposure apparatus, and an ultraviolet (UV) exposure apparatus configured to perform UV exposure by irradiating an entire upper surface of the wafer with a UV light without using a mask.