EUV Lithography Gas-Binding Component Knudsen Flow Optimization
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Solution Overview
Problem
In EUV lithography systems, gas-binding components face challenges in effectively binding contaminating substances due to limited installation space and reduced gas-binding efficiency over time, as the surface area required for effective contamination suppression is larger than optical surfaces, and the gas-binding effect diminishes as contaminating substances accumulate.
Innovation Solution
The implementation of a gas-binding component with flow ducts having a Knudsen number between 0.01 and 5, optimizing gas flow to penetrate deeply and interact with the gas-binding material, thereby increasing the effective surface area for contaminating substance adsorption without reducing efficiency, and using materials like Ru, Ni, and their compounds to maintain the gas-binding effect throughout the system's service life.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the surface area of gas-binding material is increased to improve contaminant binding capacity, then the gas-binding effect is enhanced, but the installation space required increases beyond available volume
Solution Approach 1:
The gas-binding component is arranged within the beam path of the EUV lithography system, nesting the contamination control function within the existing optical path structure. This allows the gas-binding material to be positioned in the vacuum environment where contaminants are present, without requiring additional external space
Solution Approach 2:
The patent utilizes the third dimension by arranging the gas-binding component vertically within the beam path, allowing the gas-binding material to extend in the direction perpendicular to the beam path plane. This dimensional arrangement maximizes the surface area of gas-binding material within the limited installation space of the vacuum chamber
2Duration of action of stationary object
If the gas-binding component operates continuously to maintain contamination levels, then the gas-binding effect is maintained, but the binding efficiency decreases over time as contaminants accumulate
Solution Approach 1:
The gas-binding component is pre-configured with sufficient gas-binding material capacity to handle the expected contaminant load throughout the system's service life. The component is designed with a safety margin that allows it to maintain effective contamination suppression from installation through the end of the system's operational lifecycle
Solution Approach 2:
The patent optimizes the physical and chemical parameters of the gas-binding material, such as surface area-to-volume ratio, material composition, and binding affinity, to maximize the duration of effective operation. By carefully selecting and configuring the gas-binding material parameters, the component maintains reliable performance over extended periods
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances the EUV lithography system's ability to efficiently bind contaminating substances, maintaining the gas-binding effect over the system's lifespan by optimizing gas flow and surface interactions within the available installation space, ensuring prolonged performance without the need for frequent component replacement.
Implementation Method 1
a gas-binding component which is arranged in the interior and which comprises a gas-binding material for binding contaminating substances
Implementation Method 2
with a gas flow of the residual gas in the flow duct having a Knudsen number of between 0.01 and 5
Data Source
AI summary
A lithography system for extreme ultraviolet (EUV) radiation includes a housing (25) with an interior (24) containing a residual gas (27), and at least one gas-binding component (29) which is arranged in the interior (24) and has a gas-binding material for binding contaminating substances (28). The gas-binding component (29) has at least one flow duct (33) having at least one surface with the gas-binding material, with a gas flow of the residual gas (27) in the flow duct (33) having a Knudsen number of between 0.01 and 5, preferably between 0.01 and 0.5, in particular between 0.01 and 0.3, and with a casing (26) which encapsulates a beam path of the EUV lithography system (1) being arranged in the interior (24) of the housing (25). The casing (26) preferably has an opening (37) with a maintenance shaft (36) in which the gas-binding component (29) is arranged.