EUV Light Generation Ion Debris Collection
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Solution Overview
Problem
Current EUV light generation apparatuses face challenges in efficiently collecting and managing ionized debris generated during the microfabrication process, particularly at 32 nm and beyond, due to issues with magnetic field trapping and etching gas pressure, leading to deposition of target material on optical elements and reduced exposure device performance.
Innovation Solution
An EUV light generation apparatus is designed with a chamber, a target supply unit, magnetic field generation, ion collection units, and an etching gas introduction system, optimizing magnetic flux density and etching gas pressure to trap and collect ions effectively, using hydrogen gas to minimize diffusion and prevent target material deposition on optical elements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If chamber pressure is increased to improve EUV light generation efficiency, then productivity is improved, but target material deposition on optical elements increases causing manufacturing precision to deteriorate
Solution Approach 1:
The patent extracts and removes ionized target material debris from the chamber using a magnetic field-based ion collection unit. The magnetic field generation unit creates magnetic force lines that guide ionized debris to the ion collection unit, which is positioned to intercept ions before they reach optical elements. This extraction mechanism allows higher chamber pressure operation while preventing deposition on optical surfaces.
Solution Approach 2:
The patent introduces an intermediary etching gas (such as oxygen or nitrogen) that reacts with deposited target material to form volatile compounds. This chemical intermediary enables the removal of deposited material through reactive sputtering or chemical reactions, preventing accumulation on optical elements even at higher chamber pressures where deposition rates increase.
2Loss of substance
If magnetic field strength is increased to improve ion collection efficiency, then loss of substance is reduced, but device complexity increases
Solution Approach 1:
The magnetic field generation unit serves multiple functions: it generates magnetic force lines for ion collection, defines the ion collection region geometry, and works in conjunction with the etching gas to enhance overall debris removal efficiency. This multi-functionality reduces the need for separate systems and minimizes overall device complexity while achieving effective ion collection.
3Manufacturing precision
If etching gas flow rate is increased to improve removal of deposited material, then manufacturing precision is improved, but loss of substance increases due to reduced EUV light generation
Solution Approach 1:
The patent applies partial action by introducing etching gas at optimized flow rates that are sufficient to prevent material accumulation on optical elements but not excessive enough to significantly interfere with EUV light generation. The etching gas concentration and flow rate are carefully controlled to achieve the minimum necessary cleaning effect while minimizing impact on plasma formation and EUV emission.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus effectively collects ionized debris using a magnetic field, prevents target material deposition on optical elements, and maintains high exposure device performance by optimizing magnetic flux density and etching gas pressure, ensuring efficient EUV light generation and microfabrication capabilities.
Implementation Method 1
a magnetic field generation unit for generating a magnetic field around the predetermined region
Implementation Method 2
an ion collection unit for collection an ion generated when the target material is irradiated with the laser beam
Implementation Method 3
an etching gas introduction unit for introducing an etching gas into the chamber
Data Source
AI summary
An extreme ultraviolet light generation apparatus used in combination with a laser system, the apparatus may include: a chamber provided with at least one inlet port for introducing a laser beam outputted from the laser system into the chamber; a target supply unit provided to the chamber for supplying a target material to a predetermined region inside the chamber, where the target material is irradiated with the laser beam; at least one optical element disposed inside the chamber; a magnetic field generation unit for generating a magnetic field around the predetermined region; an ion collection unit disposed in a direction of a line of magnetic force of the magnetic field for collection an ion which is generated when the target material is irradiated with the laser beam and is flowing along the line of magnetic force; and a gas introduction unit for introducing an etching gas into the chamber.