EUV-Sensitive Layer Deposition for Finer Patterned Structures
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Solution Overview
Problem
Existing methods struggle to form finer patterns during integrated circuit manufacture, necessitating new photoresist materials and deposition methods.
Innovation Solution
A method involving a cyclical deposition process using precursors with acyl halide and amino/hydroxyl functional groups forms an EUV-sensitive layer, which is then patterned using EUV radiation and selectively etched to create precise patterns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional photoresist materials and deposition methods are used, then existing patterning processes can be maintained, but finer patterns cannot be formed
Solution Approach 1:
The patent changes the chemical parameters of the photoresist material by incorporating specific functional groups (acyl halide, amino, hydroxyl) that enhance EUV sensitivity. This allows finer patterns to be formed without fundamentally changing the deposition process complexity
Solution Approach 2:
The patent creates a composite photoresist material system combining multiple functional groups (acyl halide for EUV sensitivity, amino and hydroxyl for solubility and reactivity) within the same molecular structure, enabling superior patterning performance
2Manufacturing precision
If new photoresist materials with enhanced EUV sensitivity are developed, then finer patterns can be formed, but material complexity increases
Solution Approach 1:
The patent segments the photoresist material function into distinct functional groups: acyl halide for EUV sensitivity, amino for solubility control, and hydroxyl for reactivity. This modular functional segmentation achieves high performance while maintaining reasonable material complexity
Solution Approach 2:
The patent designs photoresist molecules where functional groups serve multiple purposes: the acyl halide group provides both EUV sensitivity and reactive sites for crosslinking, while amino and hydroxyl groups collectively provide solubility, reactivity, and film formation properties
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enables the formation of finer patterns with improved EUV sensitivity and resolution, reducing the need for intermediate layers and simplifying the process.
Implementation Method 1
A method involves a cyclical deposition process using precursors with acyl halide and amino/hydroxyl functional groups forms an EUV-sensitive layer
Implementation Method 2
partially exposing the EUV-sensitive layer to EUV radiation through an EUV mask. Thus, exposed areas and unexposed areas are formed on the substrate
Implementation Method 3
The method further comprises selectively removing the unexposed EUV-sensitive layer. Thus, the surface layer in exposed areas; i.e. the EUV-sensitive layer can be removed in exposed areas, thus uncovering the surface layer in those areas
Data Source
AI summary
Methods and related systems for forming an EUV-sensitive layer. The methods comprise executing a plurality of deposition cycles. A deposition cycle comprises a first precursor pulse and a second precursor pulse. The first precursor pulse comprises exposing the substrate to a first precursor. The first precursor comprises two or more acyl halide functional groups. The second precursor pulse comprises exposing the substrate to a second precursor. In some embodiments, the second precursor comprises two or more hydroxyl functional groups.