EUV Lithography Layout Distortion Compensation
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Solution Overview
Problem
Existing EUV lithography techniques face challenges in achieving uniformity and pattern fidelity due to radiation leakage across adjacent exposure fields, leading to non-uniform exposure and pattern fidelity loss, especially in boundary and corner regions of the exposure field.
Innovation Solution
A layout adjustment technique is proposed to compensate for non-uniformity effects by modifying the design layout patterns based on their positions within the exposure field, specifically adjusting feature sizes and shapes in peripheral regions to match the central region's exposure, using a layout periphery adjustment method that includes compensation zones and edge dissection to reduce overexposure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If EUV lithography uses a mask to control irradiation for pattern formation, then pattern fidelity can be maintained in central regions, but radiation leakage across adjacent exposure fields causes non-uniform exposure and pattern fidelity loss in boundary and corner regions
Solution Approach 1:
The patent applies local quality by implementing position-dependent compensation values for different regions of the exposure field. Central regions receive different compensation treatments compared to boundary and corner regions, which receive enhanced compensation for overexposure. This regional differentiation resolves the contradiction by maintaining pattern fidelity in central regions while correcting exposure uniformity in boundary and corner regions where radiation leakage occurs.
Solution Approach 2:
The patent implements preliminary action by pre-calculating and applying compensation values to the design layout before actual lithography exposure. The compensation values are determined based on the position of features within the exposure field, with boundary and corner features receiving appropriate compensation adjustments. This preliminary correction prevents exposure non-uniformity and pattern fidelity loss before the lithography process occurs.
2Productivity
If radiation beams are used to irradiate substrates for pattern formation, then manufacturing speed can be increased, but radiation leakage leads to overexposure in peripheral regions and pattern discrepancies
Solution Approach 1:
The patent applies preliminary action by pre-adjusting the design layout with position-dependent compensation values before lithography exposure. This allows high-speed EUV lithography to proceed without requiring post-processing corrections, as pattern accuracy is ensured through preliminary compensation of expected overexposure in boundary and corner regions.
Solution Approach 2:
The patent implements feedback by using measured exposure distribution data and pattern discrepancy information to refine compensation values. The system continuously optimizes compensation based on actual lithography results, allowing high manufacturing speed to be maintained while improving pattern accuracy through iterative compensation adjustments.
Data Source
AI summary
A method includes: receiving a design layout comprising a feature extending in a peripheral region and a central region of the design layout; determining compensation values associated with a pellicle assembly and the peripheral region according to an exposure distribution in an exposure field of a workpiece; and adjusting the design layout according to the compensation values. The modifying of the shape of the feature according to the compensation values includes: partitioning the peripheral region into compensation zones; and adjusting line widths in the compensation zones of the feature according to the compensation values associated with the respective compensation zones.