EUV Light Source Vertical Segmentation for Cleanroom Optimization
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Solution Overview
Problem
Existing EUV radiation sources face challenges in operational complexity and cleanroom requirements, making it difficult to manage and optimize their components effectively.
Innovation Solution
An EUV light source is designed with a first electron beam device for supply and a second for disposal, arranged on different building levels with an EUV generation device in between, allowing for separate cleanroom conditions and compact design with minimal energy losses, using electron beam guides that can be S- or U-shaped to facilitate efficient electron beam passage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If all electron beam devices and EUV generation device are housed on the same building level, then operational management is simplified, but cleanroom specifications cannot be optimized for each component
Solution Approach 1:
The system is segmented across two building levels: the first electron beam device is housed on a first building level with first cleanroom specifications, the EUV generation device and second electron beam device are housed on a second building level with second cleanroom specifications. This spatial segmentation allows each component to operate under optimized cleanroom conditions while maintaining manageable operational control through the vertical passage connection.
2Reliability
If electron beam devices are placed on different building levels, then cleanroom specifications can be optimized, but structural complexity increases
Solution Approach 1:
The system transitions from a horizontal arrangement to a vertical arrangement across building levels. The first electron beam device is positioned on a first building level and the EUV generation device on a second building level, connected via a vertical electron beam passage through the building ceiling. This dimensional change optimizes cleanroom specifications for each component while managing structural complexity through the building's inherent vertical structure.
3Ease of operation
If conventional EUV radiation sources are used, then operational setup is simple, but EUV throughput losses are high
Solution Approach 1:
The electron beam is prepared and conditioned in the first electron beam device on the first building level before being transmitted to the EUV generation device. This preliminary action optimizes the electron beam parameters in advance, reducing EUV throughput losses during the subsequent generation and transmission process, while maintaining manageable operational setup through the vertical passage configuration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables a manageable operational setup with reduced EUV throughput losses and independent cleanroom conditions, allowing for more stringent cleanroom specifications to be met, resulting in a compact and efficient EUV radiation source for projection lithography.
Implementation Method 1
a first electron beam device 2a in the form of an electron beam supply device, an EUV generation device 2b, which is supplied with an electron beam 14 by the electron beam supply device 2a
Implementation Method 2
an EUV generation device 2b, which is supplied with an electron beam 14 by the electron beam supply device 2a
Implementation Method 3
a second electron beam device 2c in the form of an electron beam disposal device, which disposes of an electron beam 15 in the beam path downstream of the EUV generation device 2b
Data Source
AI summary
An EUV light source for a projection exposure apparatus for EUV projection lithography includes a first electron beam device in the form of an electron beam supply device. The light source furthermore includes an EUV generation device supplied with an electron beam by the electron beam supply device. The light source furthermore includes a second electron beam device in the form of an electron beam disposal device which disposes of an electron beam in the beam path downstream of the EUV generation device. At least one of the electron beam devices on the one hand and the EUV generation device on the other hand are arranged in rooms which are situated one above the other and separated by a building ceiling. At least one electron beam passage is arranged in the building ceiling. This results in an electron beam-based EUV radiation source with the possibility of a manageable operational outlay.