Electric Field-Assisted EUV Lithography for Dose Reduction

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Solution Overview

Problem

Extreme ultraviolet (EUV) lithography for semiconductor processing is costly due to the high cost per photon, necessitating dose reduction in the patterning process.

Innovation Solution

The system comprises an electromagnetic radiation source, an optical assembly, and an exposure chamber with a substrate support and an electrode assembly that applies an electric field to an EM-sensitive layer on the semiconductor substrate during exposure to EUV radiation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If EUV lithography is used for semiconductor patterning, then manufacturing precision is improved, but cost increases due to high cost per photon

Engineering Contradiction:
Improvepatterning precisionVSAvoidmanufacturing cost
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent applies an external electric field to the resist material during EUV exposure, changing the physical parameters of the resist to enhance secondary electron generation and improve patterning efficiency, thereby reducing the effective dose requirement and manufacturing cost

Inventive Principle:
Principle #35Parameter changes

2Manufacturing precision

If higher EUV dose is applied to ensure full exposure, then manufacturing precision is maintained, but productivity decreases due to increased cost and time

Engineering Contradiction:
Improveexposure completenessVSAvoidprocessing efficiency
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The electric field is applied during the exposure process to pre-enhance secondary electron generation before the chemical changes in the resist occur, making the exposure process more efficient and reducing the total dose needed for complete patterning

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The application of an electric field enhances secondary electron generation, potentially reducing the EUV dose required for substrate patterning, thereby lowering costs and improving efficiency in semiconductor processing.

Implementation Method 1

the electric field enhances secondary electron generation while exposing the substrate to EM radiation

Methodology Applied
Scientific EffectSecondary electron generation: Photoelectric Effect

Data Source

PatentUS20250085639A1Methods and systems for electric field-assisted lithography
Publication Date: 2025.03.13 ASM IP HLDG BV
  • US20250085639A1 patent drawing
  • US20250085639A1 patent drawing
  • US20250085639A1 patent drawing

AI summary

Lithographical systems and methods. Embodiments of methods disclosed herein comprise exposing a substrate to an electric field while exposing the substrate to electromagnetic radiation. Thus, dose reduction can be obtained.