Protective Polymer Layer for EUV Lithography Damage Reduction
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Solution Overview
Problem
The scaling down of semiconductor integrated circuits using extreme ultraviolet (EUV) and electron-beam (e-beam) lithography methods leads to device damage due to shorter wavelengths and higher energy, causing issues such as positive charging, electrostatic discharge, and contamination, which affect manufacturing efficiency and device complexity.
Innovation Solution
A lithography patterning method involving the formation of a protective non-conjugated polymer layer and a conductive conjugated polymer layer between the substrate and the photoresist layer to prevent electron transfer and provide charge dissipation, thereby reducing damage during EUV or e-beam exposure processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If EUV or e-beam lithography methods are used to pattern smaller features, then manufacturing precision is improved, but device damage occurs due to higher energy and shorter wavelengths
Solution Approach 1:
The patent introduces a protective layer comprising non-conjugated polymer and conjugated polymer as an intermediary between the substrate and the lithography process. This protective layer absorbs excess energy and prevents direct interaction between high-energy EUV/e-beam radiation and the underlying device structures, thereby reducing device damage while maintaining patterning precision
Solution Approach 2:
The protective layer is formed beforehand on the substrate before the lithography process. This pre-formed layer acts as a cushion that absorbs and dissipates the harmful effects of high-energy radiation during exposure, preventing electrostatic discharge and electron transfer to the device structures
2Object-affected harmful factors
If protective layers are added to prevent device damage, then device damage is reduced, but process complexity increases
Solution Approach 1:
The protective layer is formed as a composite structure combining non-conjugated polymer (for physical protection and electron scattering) and conjugated polymer (for charge dissipation). This composite approach provides multiple protective functions in a single integrated layer, reducing the need for multiple separate process steps
Solution Approach 2:
The patent modifies the chemical and physical parameters of the protective layer by selecting specific polymer types with distinct properties (non-conjugated for scattering, conjugated for conduction). This parameter-based differentiation allows each component to address specific damage mechanisms efficiently
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively isolates the substrate from electron discharge and provides an electron transfer path, reducing device damage and improving patterning accuracy, thus enhancing the manufacturing process for semiconductor devices.
Implementation Method 1
The protective layer may be configured to protect the substrate from electron discharge or electron transfer
Implementation Method 2
The conductive layer may be configured to provide an electron transfer path or charge dissipation path
Implementation Method 3
The conductive layer may be configured to provide an electron transfer path or charge dissipation path
Data Source
AI summary
A method for fabricating an integrated circuit device is disclosed. The method is a lithography patterning method that can include providing a substrate; forming a protective layer over the substrate; forming a conductive layer over the protective layer; forming a resist layer over the conductive layer; and exposing and developing the resist layer.