EUV Mask Aberration Correction via Monitoring Macros
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Solution Overview
Problem
In extreme ultraviolet (EUV) lithography, existing methods fail to effectively address aberrations caused by slits during the exposure process, leading to variations in pattern critical dimensions and optical proximity effects, which affect the accuracy and reliability of semiconductor device manufacturing.
Innovation Solution
A method involving the construction of monitoring macros, which are arranged at intervals to monitor aberration effects, and an optical proximity correction (OPC) process using simulation models to correct for these effects, ensuring accurate pattern transfer and improved manufacturing reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If existing methods are used for EUV lithography without addressing slit-induced aberrations, then the exposure process can be performed, but pattern critical dimension variations and optical proximity effects occur, reducing manufacturing precision
Solution Approach 1:
The patent applies preliminary action by constructing monitoring macros and performing optical proximity correction (OPC) simulations before the actual EUV exposure process. The method pre-calculates slit-induced aberration effects and creates corrected mask patterns that compensate for these effects during exposure, thereby improving pattern critical dimension accuracy and transfer reliability
Solution Approach 2:
The patent implements feedback by using monitoring macros that capture actual exposure results and comparing them with simulation models. The measured critical dimension variations are fed back to refine the OPC models and adjust exposure parameters, creating a closed-loop system that continuously improves manufacturing precision and reliability
2Manufacturing precision
If monitoring macros are constructed and OPC simulations are performed to correct slit-induced aberrations, then pattern transfer accuracy improves, but the manufacturing process complexity increases
Solution Approach 1:
The patent applies segmentation by dividing the mask into multiple regions with different monitoring macros placed at specific locations. Each monitoring macro region is independently simulated and corrected for slit-induced aberrations, allowing localized optimization without requiring complete redesign of the entire mask, thereby managing complexity while improving precision
Solution Approach 2:
The patent uses simulation models as intermediaries between the mask design and the actual exposure process. These models mathematically represent slit-induced aberration effects and enable virtual testing and correction of mask patterns before fabrication, reducing the need for iterative physical prototyping and simplifying the overall manufacturing process
Data Source
AI summary
A method of manufacturing an extreme ultraviolet (EUV) mask, for use in an EUV exposure process, on a mask substrate includes constructing a first monitoring macro considering an effect caused by a slit used in the EUV exposure process, performing an optical proximity correction (OPC) using a plurality of second monitoring macros, wherein each of the plurality of second monitoring macros is substantially identical to the first monitoring macro, inputting mask tape-out (MTO) design data acquired through the OPC, preparing mask data including at least one of data format conversion, mask process correction (MPC), and job-deck for the MTO design data, and performing EUV exposure (writing) on the mask substrate based on the mask data.