EUV Mask Layout Modification for Target Pattern Diameter Consistency
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Solution Overview
Problem
The existing methods for manufacturing extreme ultraviolet (EUV) masks for semiconductor memory devices face challenges in forming precise target patterns, leading to abnormal patterns that can result in increased electrical resistance and short-circuit defects, affecting the yield and reliability of semiconductor devices.
Innovation Solution
A method involving the preparation of preliminary layouts, formation of spacer patterns, and evaluation of target patterns to modify the layouts, ensuring that spacer patterns extend in specific directions with varying widths and inclinations, and using these modified layouts to manufacture EUV masks that form target patterns with consistent diameters across the cell block region, including corners and edges.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional EUV mask manufacturing methods are used, then the manufacturing process is simple, but the target patterns have inconsistent diameters leading to abnormal patterns and short-circuit defects
Solution Approach 1:
The patent applies preliminary action by modifying the EUV mask layout design before manufacturing to include spacer patterns with varying widths and inclinations. This pre-planned design adjustment ensures that the resulting target patterns will have consistent diameters across different regions (center and corners), preventing abnormal patterns and short-circuit defects without requiring complex post-manufacturing corrections
Solution Approach 2:
The patent implements local quality by applying different width and inclination characteristics to specific spacer patterns based on their location in the layout. Spacer patterns in different regions (e.g., corner vs. center) are designed with locally optimized dimensions to compensate for optical proximity effects, ensuring uniform target pattern diameters across the entire chip area
2Reliability
If spacer patterns with varying widths and inclinations are used, then target pattern formation is improved, but the layout design complexity increases
Solution Approach 1:
The patent employs feedback by using the evaluated results of preliminary target patterns to guide subsequent layout modifications. The process involves forming preliminary target patterns, evaluating their diameters, and using this feedback information to adjust spacer pattern dimensions and inclinations in the final layout, creating a closed-loop design optimization that ensures electrical reliability
Solution Approach 2:
The patent applies preliminary action by performing layout modifications based on preliminary evaluations before final mask manufacturing. The varying widths and inclinations of spacer patterns are determined in advance through systematic evaluation and adjustment, ensuring reliable target pattern formation without requiring complex real-time adjustments during manufacturing
Data Source
AI summary
A method of manufacturing an extreme ultraviolet mask including preparing a preliminary layout, forming a plurality of preliminary target patterns by using a plurality of preliminary spacer patterns formed by using the preliminary layout, evaluating presence or absence of an abnormal target pattern among the plurality of preliminary target patterns, preparing a layout configured to form a plurality of spacer patterns by modifying the preliminary layout when the plurality of preliminary target patterns include the abnormal target pattern, and manufacturing an extreme ultraviolet mask with the layout to form a plurality of target patterns by using the plurality of spacer patterns, wherein, the plurality of preliminary spacer patterns extend in one direction.