EUV Mask Pellicle Fabrication and Absorber Design
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Solution Overview
Problem
Conventional EUV lithography masks suffer from large aerial image shifts and pellicle membrane damage during fabrication, leading to poor lithography performance and usability issues.
Innovation Solution
The EUV mask incorporates an absorber layer with a specific refractive index and extinction coefficient range, and a pellicle membrane is bonded to a temporary layer with enhanced strength and a mesh-free structure to prevent damage, using materials like silicon carbide for the pellicle and Radium-based alloys for the absorber layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional EUV mask absorber layers are used, then the mask structure is simple, but large aerial image shifts occur leading to poor lithography performance
Solution Approach 1:
The patent employs a composite absorber layer structure consisting of multiple materials with different optical properties. Specifically, it uses a first absorber material (e.g., TaBN) combined with a second absorber material (e.g., Ru) in specific thickness ratios to achieve the desired refractive index and extinction coefficient, thereby reducing aerial image shift while maintaining structural feasibility
Solution Approach 2:
The patent systematically adjusts critical parameters including the refractive index (n) to 0.99-1.01 and extinction coefficient (k) to 0.40-0.55 by varying the thickness and composition of absorber layer materials. This parameter optimization directly reduces aerial image shift and improves lithography performance
2Reliability
If conventional pellicle fabrication processes are used, then the process is simple, but the pellicle membrane becomes distorted, broken, or damaged
Solution Approach 1:
The patent applies a protective coating to the pellicle membrane before the fabrication process begins. This preliminary protective layer prevents the membrane from becoming distorted or broken during subsequent handling and processing steps, thereby improving reliability without significantly complicating the overall manufacturing process
Solution Approach 2:
The patent implements a support structure or temporary carrier that cushions and supports the fragile pellicle membrane during fabrication. This beforehand cushioning prevents damage by distributing mechanical stresses and protecting the membrane from handling-induced distortion or breakage
3Object-generated harmful factors
If the pellicle membrane is made thinner to reduce interference, then the interference is minimized, but the membrane becomes more susceptible to damage
Solution Approach 1:
The patent uses composite material structures for the pellicle membrane, combining materials with different mechanical and optical properties. This allows the membrane to maintain sufficient strength and damage resistance while keeping the thickness optimized to minimize interference with the EUV lithography process
Solution Approach 2:
The patent employs advanced thin film technology to create a pellicle membrane that achieves the desired thinness for minimal interference while incorporating structural features or material compositions that maintain adequate mechanical strength and damage resistance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution significantly reduces aerial image shifts, enhances pellicle membrane strength, and improves lithography performance by minimizing damage during processing and exposure.
Implementation Method 1
an absorber layer disposed over the capping layer. The absorber layer contains a material that has a refractive index in a range from about 0.95 to about 1.01 and an extinction coefficient greater than about 0.03
Implementation Method 2
The EUV scanners use reflective rather than refractive optics, i.e., mirrors instead of lenses. EUV scanners provide the desired pattern on an absorption layer
Implementation Method 3
reflective optics rather than refractive optics is used. A multi-layered (ML) structure is used as a EUV mask blank
Data Source
AI summary
The present disclosure provides a method in accordance with some embodiments. A wafer is grinded from a back side. The wafer is inserted into an opening defined by a frame holder. The frame holder is attached to a carrier through a temporary layer. A front side of the wafer is attached to the temporary layer. Thereafter, the wafer is etched from the back side until the wafer reaches a predetermined thickness. Thereafter, the frame holder and the wafer therein are separated from the temporary layer and the carrier.


