EUV Lithography Mask Analysis Using Particle Beam Vortex Control
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Solution Overview
Problem
Current methods for analyzing and processing lithography masks, particularly in EUV lithography, face challenges in achieving sub-nanometer accuracy due to residual fluctuations and drifts in electron beam position, which affect the resolution and precision of structure registration and writing processes.
Innovation Solution
The method involves generating and utilizing a particle beam vortex, coupled with a spiral plate that adjusts dynamically to compensate for position and orientation fluctuations, enhancing the beam's stability and focusing capabilities, thereby improving resolution and accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional electron beam methods are used for mask analysis, then the equipment can achieve sufficient lateral resolution, but the beam position fluctuations and drifts prevent sub-nanometer measurement accuracy
Solution Approach 1:
The patent implements feedback control by continuously monitoring the electron beam position using reference structures on the mask and dynamically adjusting the beam positioning system to compensate for detected deviations, thereby maintaining sub-nanometer measurement accuracy despite inherent beam instability
Solution Approach 2:
The patent introduces reference structures as intermediary elements on the mask that serve as stable positional markers. These reference structures mediate between the unstable beam and the mask features, enabling accurate position measurements by providing fixed reference points for comparison
2Manufacturing precision
If the electron beam focal spot is reduced to improve resolution, then lateral resolution increases, but beam position stability deteriorates due to amplified fluctuations and drifts
Solution Approach 1:
The patent performs preliminary positioning by writing reference structures on the mask before the actual measurement or fabrication process. These pre-written reference structures establish a stable coordinate system that compensates for subsequent beam drifts, enabling accurate positioning even with reduced focal spot sizes
Solution Approach 2:
The patent dynamically adjusts beam parameters such as focal spot size and beam energy during the process. By changing these parameters adaptively based on real-time position feedback, the system maintains both high resolution (small focal spot) and high accuracy (compensated position) simultaneously
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly enhances the resolution and stability of the electron beam, allowing for precise registration and writing on masks by compensating for beam fluctuations and drifts, thereby improving the accuracy and precision of the analysis and processing processes.
Implementation Method 1
Generating at least one particle beam vortex; Using the particle beam vortex for analyzing and/or processing of the mask
Data Source
AI summary
The present invention relates to a method, an apparatus and a computer program for analyzing and/or processing of a mask for lithography, in particular a mask for EUV lithography.A method for analyzing and/or processing of a mask for lithography, in particular a mask for EUV lithography, is described, which method comprises the following steps: 1a.) generating at least one particle beam vortex; and 1b.) using the particle beam vortex for analyzing and/or processing of the mask.