EUV Lithography Membrane Stack for Low Reflectivity and Heat Dissipation
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Solution Overview
Problem
Existing EUV lithography membranes face challenges with high EUV reflectivity, low emissivity, and susceptibility to degradation, leading to overheating and reduced performance or failure under high heat loads.
Innovation Solution
A membrane design comprising a stack of layers, including a base layer with high emissivity and protective capping layers, optimized for EUV transmissivity and thermal management, using specific metal oxides and compounds to minimize reflectance and enhance durability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a membrane is used to protect the patterning device, then contamination protection is improved, but EUV reflectivity increases and transmissivity decreases
Solution Approach 1:
The membrane employs a composite structure with multiple layers including a base layer (e.g., silicon nitride or silicon oxide) and a capping layer (e.g., molybdenum silicide or tungsten silicide). This composite design allows the membrane to simultaneously achieve contamination protection, low EUV reflectivity, and high transmissivity by combining materials with complementary properties.
Solution Approach 2:
Different regions of the membrane have different material compositions optimized for specific functions. The base layer provides mechanical strength and chemical stability, while the capping layer provides low EUV reflectivity and oxidation protection. This local differentiation of material properties resolves the contradiction between protection and transmissivity.
2Productivity
If the membrane operates under high heat load, then lithography performance is maintained, but the membrane degrades and fails prematurely
Solution Approach 1:
The membrane design changes the thermal parameters of the system by selecting materials with high thermal conductivity and appropriate heat capacity. The base layer and capping layer are engineered to manage heat dissipation, allowing the membrane to withstand high heat loads during lithography operations without degradation.
Solution Approach 2:
The membrane materials are selected and engineered to have controlled thermal expansion properties that prevent stress buildup and structural failure under high heat loads. The capping layer and base layer are designed with compatible thermal expansion coefficients to maintain structural integrity during thermal cycling in high-power EUV lithography.
3Temperature
If the membrane has high emissivity for thermal management, then heat dissipation is improved, but EUV reflectivity increases
Solution Approach 1:
The membrane is segmented into functionally distinct layers: a base layer for mechanical support and a capping layer for thermal management and EUV interaction. The capping layer is specifically engineered with high emissivity materials (e.g., molybdenum silicide) to dissipate heat, while the overall membrane structure maintains low EUV reflectivity through careful material selection and thickness optimization.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The membrane design achieves low EUV reflectivity, high emissivity, and improved thermal stability, extending the membrane's lifetime and performance under extreme conditions.
Implementation Method 1
the membrane has a combination of high emissivity and a low possibility of failing
Implementation Method 2
the membrane has high EUV transmissivity
Implementation Method 3
the membrane design achieves low EUV reflectivity
Data Source
AI summary
Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.