EUV Patterning Microbridge Defect Reduction via Oblique Deposition
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Solution Overview
Problem
EUV patterning in microelectronic workpieces often results in uncorrectable microbridge defects, which cause fatal device failures, and there is a trade-off between eliminating these defects and introducing broken line defects.
Innovation Solution
The use of oblique deposition processes, such as physical vapor deposition, to apply protective material over patterned layers in multiple directions, allowing for the removal of material bridges between line patterns while protecting the lines, thereby reducing or eliminating microbridge defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If EUV patterning is used to achieve reduced feature sizes, then manufacturing precision is improved, but microbridge defects occur causing device failures
Solution Approach 1:
The patent applies oblique deposition of protective material before the final patterning step. This preliminary protective layer is deposited at an angle to preferentially coat the sidewalls of emerging lines, creating a protective shield that prevents material bridge formation during subsequent processing steps, thereby eliminating microbridge defects while maintaining the desired reduced feature sizes
Solution Approach 2:
The patent introduces an intermediary protective material layer between the patterned layer and the underlying structure. This intermediary layer, deposited via oblique deposition, serves as a sacrificial protective coating that can be selectively removed later. It mediates the interaction between adjacent lines by providing physical separation and protection, preventing direct material bridge formation while allowing the final pattern to be achieved with high precision
2Reliability
If aggressive etching is used to remove material bridges, then microbridge defects are reduced, but broken line defects are introduced
Solution Approach 1:
The patent performs preliminary oblique deposition of protective material on the sidewalls of patterned lines before the etching step. This protective coating is applied in advance to shield the lines from the subsequent aggressive etching process. When the etching step removes material bridges, the pre-applied protective layer remains intact on the lines, preventing broken line defects while allowing effective microbridge removal
Solution Approach 2:
The patent applies protective material with local quality by using oblique deposition at specific angles. The deposition angle is optimized to preferentially coat the sidewalls of vertical or near-vertical line structures while leaving horizontal or bridging material exposed. This creates spatially varying protection: lines receive protective coating while material bridges remain vulnerable to removal, enabling selective removal without damaging lines
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces or eliminates microbridge defects without damaging the line patterns, ensuring the integrity of the microelectronic workpieces and preventing fatal device failures.
Implementation Method 1
depositing protective material over the patterned layer using one or more oblique deposition processes
Data Source
AI summary
Embodiments reduce or eliminate microbridge defects in extreme ultraviolet (EUV) patterning for microelectronic workpieces. A patterned layer is formed over a multilayer structure using an EUV patterning process. Protective material is then deposited over the patterned layer using one or more oblique deposition processes. One or more material bridges extending between line patterns within the patterned layer are then removed while using the protective material to protect the line patterns. As such, microbridge defects caused in prior solutions are reduced or eliminated. For one embodiment, the oblique deposition processes include physical vapor deposition (PVD) processes that apply the same or different protective materials in multiple directions with respect to line patterns within the patterned layer. For one embodiment, the removing includes one or more plasma trim processes. Variations can be implemented.