EUV Micropatterning via Photosensitivity Assisting Layer
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Solution Overview
Problem
Photolithography techniques using extreme ultraviolet rays face challenges in forming clear micropatterns without pattern collapse as patterns are miniaturized, leading to the need for a method that prevents pattern collapse while maintaining effective patterning.
Innovation Solution
A method involving the formation of an etching target film on a substrate, followed by a photosensitivity assisting layer terminated with a hydrophilic group, an adhesive layer forming a covalent bond with the hydrophilic group, and a photoresist film, which allows for patterning without pattern collapse by utilizing secondary electrons excited by EUV light.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If photolithography techniques using extreme ultraviolet rays are used to form micropatterns, then patterning capability is improved, but pattern collapse occurs as patterns are miniaturized
Solution Approach 1:
The patent introduces a photosensitivity assisting layer as an intermediary between the EUV light source and the photoresist film. This layer absorbs EUV light and generates secondary electrons that penetrate the photoresist film, enabling effective patterning while reducing the direct light exposure that causes pattern collapse. The intermediary layer thus mediates between the need for high-resolution patterning and the need to prevent pattern deformation.
Solution Approach 2:
The patent replaces direct optical exposure (mechanical/electromagnetic system) with a secondary electron-based exposure mechanism. By using the photosensitivity assisting layer to convert EUV light into secondary electrons, the system substitutes direct light action on the photoresist with indirect electron-mediated action, reducing the harmful effects of direct EUV exposure while maintaining patterning effectiveness.
2Productivity
If direct light exposure is used for patterning, then patterning efficiency is maintained, but pattern collapse occurs
Solution Approach 1:
The photosensitivity assisting layer serves as a mediator that converts EUV light into secondary electrons, which then expose the photoresist film. This indirect exposure mechanism maintains patterning efficiency while improving pattern clarity by avoiding direct EUV light exposure that causes pattern collapse. The intermediary layer enables the system to achieve both high productivity and high manufacturing precision.
3Manufacturing precision
If more light is used for exposure, then patterning completeness is improved, but pattern collapse increases
Solution Approach 1:
The patent substitutes direct light exposure with secondary electron exposure by introducing the photosensitivity assisting layer. This substitution allows achieving complete patterning through electron-mediated exposure while avoiding the pattern collapse associated with increased direct light exposure. The secondary electrons provide sufficient exposure energy without the harmful effects of intense EUV light.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the formation of clear micropatterns without pattern collapse, using secondary electrons in addition to direct light exposure, reducing the amount of light required and improving pattern clarity.
Implementation Method 1
utilizing secondary electrons excited by EUV light
Implementation Method 2
uses secondary electrons in addition to direct light exposure
Implementation Method 3
the adhesive layer forming a covalent bond with the hydrophilic group
Data Source
AI summary
Provided herein is a method of forming micropatterns, including: forming an etching target film on a substrate; forming a photosensitivity assisting layer on the etching target film, the photosensitivity assisting layer being terminated with a hydrophilic group; forming an adhesive layer on the photosensitivity assisting layer, the adhesive layer forming a covalent bond with the hydrophilic group; forming a hydrophobic photoresist film on the adhesive layer; and patterning the photoresist film.