EUV Mirror Graphene Layer for Thermal Balance
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Solution Overview
Problem
Semiconductor process apparatuses using EUV light for photolithography face yield reduction due to mirror deformation caused by temperature imbalances resulting from partial EUV irradiation.
Innovation Solution
Incorporating a graphene layer into the reflective layer of mirrors within the semiconductor process apparatus, which improves thermal conductivity and reduces temperature imbalances by efficiently distributing heat across the mirror surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If EUV light is irradiated only on a partial area of the mirrors, then the photolithography process can be performed, but temperature imbalance occurs causing mirror deformation and yield decrease
Solution Approach 1:
The patent applies local quality by creating a temperature compensation pattern that is spatially distributed across the mirror surface. The compensation light is applied selectively to specific regions (non-irradiated areas) of the mirror to locally counteract temperature imbalances, rather than uniformly heating the entire mirror. This localized approach maintains mirror stability while preserving the partial-area EUV irradiation needed for photolithography productivity.
2Ease of manufacture
If the reflective layer uses conventional materials only, then the manufacturing process is simpler, but temperature imbalance causes mirror deformation
Solution Approach 1:
The patent employs composite materials by integrating a temperature compensation layer (such as graphene or other thermally conductive materials) into the existing reflective layer structure (Mo/Si multilayer). This composite structure combines the high reflectivity of conventional EUV reflective materials with the superior thermal conductivity of the compensation material, achieving both ease of manufacture (using established deposition techniques) and high manufacturing precision (maintaining mirror shape accuracy under thermal stress).
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of a graphene layer in the reflective layer significantly reduces mirror deformation and aberrations, thereby enhancing the yield and reliability of the semiconductor processing operations.
Implementation Method 1
Incorporating a graphene layer into the reflective layer of mirrors within the semiconductor process apparatus, which improves thermal conductivity and reduces temperature imbalances by efficiently distributing heat across the mirror surface
Implementation Method 2
a light-receiving optical unit (optical light receiver) including a plurality of mirrors generating output light by reflecting the EUV light reflected from the mask
Data Source
AI summary
A semiconductor process apparatus includes a light generator configured to output extreme ultraviolet (EUV) light having an EUV wavelength band, a mask stage configured to seat a mask reflecting the EUV light output from the light generator, a light-receiving optical unit including a plurality of mirrors generating output light by reflecting the EUV light reflected from the mask, at least one of the plurality of mirrors including a mirror body and a reflective layer attached to a surface of the mirror body, a power supply configured to apply a bias voltage to the reflective layer, and a substrate stage configured to seat a substrate to be irradiated with the output light.