EUV Mirror Surface Protecting Layer Prevents Substrate Densification

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Solution Overview

Problem

Mirrors for extreme-ultraviolet (EUV) wavelength range in microlithography experience variations in reflectivity with angle of incidence and high EUV light exposure, leading to substrate densification and undesirable changes in optical imaging properties over time.

Innovation Solution

A mirror design with a substrate and layer arrangement featuring a periodic sequence of high and low refractive index layers, including a surface protecting layer system with a thickness greater than 20 nm to minimize EUV radiation transmission and prevent irreversible changes, ensuring long-term stability and uniform reflectivity across a wide angle of incidence interval.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a layer arrangement with periodic sequence of high and low refractive index layers is used to achieve high reflectivity, then reflectivity is improved, but reflectivity varies with angle of incidence

Engineering Contradiction:
ImprovereflectivityVSAvoiduniformity of reflectivity over angle of incidence
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

The patent applies parameter changes by carefully controlling the thickness of each layer in the periodic sequence. Specifically, the thickness of the low refractive index layer is set to between 0.5λ/n_low and 2.0λ/n_low, and the thickness of the high refractive index layer is set to between 0.5λ/n_high and 2.0λ/n_high, where λ is the design wavelength. This parameter optimization ensures that the reflectivity remains substantially constant across a wide angle of incidence range while maintaining high reflectivity values.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If EUV light transmission to substrate is not minimized, then substrate is exposed to high doses of EUV light, but this causes substrate densification and changes in optical imaging properties

Engineering Contradiction:
Improveoptical imaging stabilityVSAvoidEUV radiation exposure to substrate
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent introduces an intermediary function by ensuring that the layer arrangement serves as a protective barrier between the EUV light source and the substrate. The optimized periodic layer structure achieves this by minimizing EUV light transmission to the substrate through careful selection of layer materials and thicknesses, thereby preventing substrate densification and maintaining optical imaging stability without requiring additional protective layers.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Object-affected harmful factors

If high reflectivity is achieved through multiple periods of layers, then more EUV light is blocked from substrate, but this increases device complexity

Engineering Contradiction:
ImproveEUV radiation transmission to substrateVSAvoidnumber of layers
Core Design Contradiction:
Object-affected harmful factorsVSDevice complexity

Solution Approach 1:

The patent reduces device complexity by optimizing the number of periods in the layer arrangement. Instead of using a large number of periods, the invention achieves sufficient EUV radiation blocking with only 2-10 periods by carefully controlling the thickness parameters of individual layers. This parameter optimization allows the layer arrangement to function effectively as both a high-reflectivity coating and a substrate protection barrier, minimizing the number of layers required.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution achieves high and uniform reflectivity with reduced EUV radiation transmission to the substrate, maintaining optical stability and preventing substrate densification, thus ensuring consistent imaging performance over extended periods.

Implementation Method 1

the layer arrangement comprises a periodic sequence of at least two periods of individual layers, wherein the periods comprise two individual layers composed of different materials for a high refractive index layer and a low refractive index layer

Methodology Applied
Scientific EffectReflection: Reflection

Implementation Method 2

the layer arrangement comprises at least one surface protecting layer or at least one surface protecting layer system having a thickness of greater than 20 nm... wherein the transmission of EUV radiation through the layer arrangement amounts to less than 2%

Methodology Applied
Scientific EffectAbsorption (EM radiation): Absorption (EM radiation)

Data Source

PatentUS9494718B2Mirror for the EUV wavelength range, substrate for such a mirror, projection objective for microlithography comprising such a mirror or such a substrate, and projection exposure apparatus for microlithography comprising such a projection objective
Publication Date: 2016.11.15 CARL ZEISS SMT GMBH
  • US9494718B2 patent drawing
  • US9494718B2 patent drawing
  • US9494718B2 patent drawing

AI summary

A mirror (1a; 1a′; 1b; 1b′; 1c; 1c′) for the EUV wavelength range and having a substrate (S) and a layer arrangement, wherein the layer arrangement includes at least one surface layer system (P′″) consisting of a periodic sequence of at least two periods (P3) of individual layers, wherein the periods (P3) include two individual layers composed of different materials for a high refractive index layer (H′″) and a low refractive index layer (L′″), wherein the layer arrangement includes at least one surface protecting layer (SPL, Lp) or at least one surface protecting layer system (SPLS) having a thickness of greater than 20 nm, and preferably greater than 50 nm.