EUV Debris Catcher with High-Transmittance Nanofibers
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Solution Overview
Problem
EUV lithography systems face contamination issues due to tin debris generated during the production of EUV light, which adversely affect performance and efficiency by accumulating in the scanner side and interfering with semiconductor manufacturing operations.
Innovation Solution
A debris catcher with a high EUV transmittance is employed between the LPP radiation source and the scanner side to collect and prevent tin debris from flowing into the scanner, utilizing a network membrane composed of fibers or nanotubes with a two-dimensional material layer for enhanced debris trapping.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a debris catcher is introduced to collect tin debris, then contamination is reduced and operational performance is maintained, but device complexity increases due to additional components in the EUV beam path
Solution Approach 1:
A debris catcher is introduced as an intermediary component in the EUV beam path between the LPP radiation source and the scanner. The debris catcher includes a support structure with a debris collection region and a scraper that actively removes tin debris from the beam path, preventing contamination of downstream optics while maintaining EUV light transmission.
Solution Approach 2:
The debris catcher utilizes a thin membrane structure as the debris collection surface. This membrane is positioned in the EUV beam path to intercept tin debris while allowing EUV light to pass through. The thin film design minimizes interference with the beam while effectively capturing debris particles.
2Object-affected harmful factors
If the debris catcher is positioned close to the LPP source to maximize debris collection, then debris trapping efficiency is improved, but EUV light transmission is reduced due to absorption and scattering
Solution Approach 1:
The debris catcher is designed with spatially differentiated functionality: the front region (closer to the LPP source) has higher debris collection capability with denser membrane structure, while the rear region has lower density to minimize EUV light absorption. This gradient design allows effective debris trapping in the critical zone while maintaining high light transmission for the bulk of the beam path.
Solution Approach 2:
Instead of placing a solid barrier perpendicular to the beam path, the debris catcher uses a membrane structure that extends in the dimension parallel to the beam propagation. This allows the debris collection surface to be positioned close to the source without creating a thick obstacle that would block EUV light, effectively using the third dimension to resolve the contradiction.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The debris catcher effectively prevents tin debris from entering the scanner side, maintaining the integrity and efficiency of EUV lithography operations by ensuring high EUV transmittance and mechanical strength, thereby reducing contamination and maintaining operational performance.
Implementation Method 1
A debris catcher with a high EUV transmittance is employed between the LPP radiation source and the scanner side to collect and prevent tin debris from flowing into the scanner, utilizing a network membrane composed of fibers or nanotubes
Implementation Method 2
utilizing a network membrane composed of fibers or nanotubes with a two-dimensional material layer for enhanced debris trapping
Implementation Method 3
The LPP is produced by focusing a high-power laser beam, from a carbon dioxide (CO2) laser and the like, onto small fuel droplet targets of tin (Sn) in order to transition it into a highly-ionized plasma state. This LPP emits EUV light with a peak maximum emission of about 13.5 nm or smaller
Implementation Method 4
The LPP is produced by focusing a high-power laser beam, from a carbon dioxide (CO2) laser and the like, onto small fuel droplet targets of tin (Sn) in order to transition it into a highly-ionized plasma state
Data Source
AI summary
An extreme ultra violet (EUV) lithography apparatus includes a light source that generates an EUV light beam, a scanner that receives the light from a junction with the light source and directs the light to a reticle stage, and a debris catcher disposed on a EUV beam path between the light source and the scanner. The debris catcher includes a network membrane including a plurality of nano-fibers.