EUV Optical Elements with Nanoscale Features

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Solution Overview

Problem

Current EUV lithography systems face inefficiencies due to high absorption and scattering of EUV radiation by materials used in optical elements, leading to the need for high-power light sources and susceptibility to thermal damage, with limited reflectivity and short lifetimes.

Innovation Solution

The development of optical elements with integrated nanoscale features that enhance reflectivity beyond bulk materials, using materials like Molybdenum and Ruthenium, and fabrication techniques such as atomic layer deposition to achieve reflectivities greater than 70% at EUV wavelengths, reducing absorption and scattering.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of energy

If conventional EUV optical elements are used, then the lithography system can operate, but the reflectivity is limited to around 67% and absorption is high

Engineering Contradiction:
ImproveEUV light absorptionVSAvoidoptical element lifetime
Core Design Contradiction:
Loss of energyVSReliability

Solution Approach 1:

The patent changes the physical parameters of the optical element surface by introducing nanoscale features (ripples, gratings, or textured patterns) with specific dimensions (e.g., 1-100 nm period) and geometries. These parameter changes modify the optical interaction at the nanoscale, enabling enhanced reflectivity through plasmonic resonances or photonic crystal effects while reducing absorption losses in the bulk material.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent creates composite optical elements combining conventional bulk materials (like Mo/Si multilayers) with nanoscale surface structures. This composite approach integrates the bulk material's inherent EUV reflectivity with the nanoscale features' ability to trap and resonate EUV photons, achieving synergistic effects that improve overall reflectivity beyond what either component could achieve alone.

Inventive Principle:
Principle #40Composite materials

2Illumination intensity

If high power EUV light sources are used to compensate for absorption, then sufficient light reaches the wafer, but the optical components suffer thermal damage and have limited lifetime

Engineering Contradiction:
ImproveEUV light intensity at waferVSAvoidoptical component temperature
Core Design Contradiction:
Illumination intensityVSTemperature

Solution Approach 1:

The patent converts the harmful effect of high light intensity (which causes thermal damage) into a benefit by using nanoscale features to enhance reflectivity. This reduces the amount of light absorbed as heat, allowing high illumination intensity at the wafer while keeping optical component temperatures manageable through improved optical efficiency.

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

3Measurement precision

If more mirrors are added to the scanner tool to manage and focus light, then the desired resolution is achieved, but less than 1% of light energy is transferred through the system

Engineering Contradiction:
Improvefeature size resolutionVSAvoidlight energy transmission
Core Design Contradiction:
Measurement precisionVSLoss of energy

Solution Approach 1:

The patent applies nanoscale surface feature parameters (period, amplitude, geometry) to mirror surfaces to enhance their reflectivity specifically at EUV wavelengths. This parameter optimization allows each mirror in the multi-mirror system to reflect more light, compensating for the cumulative losses across 12 or more interfaces and improving overall energy transmission while maintaining the necessary focusing capability for sub-20 nm resolution.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution increases the efficiency of EUV lithography systems by allowing the use of lower power light sources, reducing thermal issues, and extending the lifetime of optical components, while improving reflectivity and transmission efficiency.

Implementation Method 1

The plurality of structural features can increase the reflectivity of the material to greater than 70% for a wavelength between 0.1 nanometer and 250 nanometer

Methodology Applied
Scientific EffectElectromagnetic radiation interaction: Reflection

Implementation Method 2

Most materials tend to absorb EUV radiation, consequently there are limited selection of materials available for optical elements used in photolithography systems

Methodology Applied
Scientific EffectElectromagnetic radiation absorption: Absorption (EM radiation)

Data Source

PatentEP3224657B1Materials, components, and methods for use with extreme ultraviolet radiation in lithography and other applications
Publication Date: 2024.04.10 JAISWAL SUPRIYA
  • EP3224657B1 patent drawingFigure 1
  • EP3224657B1 patent drawingFigure 2
  • EP3224657B1 patent drawingFigure 3~4

AI summary

Nanostructured photonic materials, and associated components for use in devices and systems operating at ultraviolet (UV), extreme ultraviolet (EUV), and/or soft Xray wavelengths are described. Such a material may be fabricated with nanoscale features tailored for a selected wavelength range, such as at particular UV, EUV, or soft Xray wavelengths or wavelength ranges. Such a material may be used to make components such as mirrors, lenses or other optics, panels, lightsources, masks, photoresists, or other components for use in applications such as lithography, wafer patterning, astronomical and space applications, biomedical applications, biotech or other applications.