EUV Pellicle CNT Thin Film Plasma Damage Resistance
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Solution Overview
Problem
Carbon nano tube (CNT) thin films used in pellicles for EUV lithography are prone to damage from plasma, limiting their transmittance and durability, which affects the reliability and longevity of the pellicles.
Innovation Solution
A method involving the use of protective films on both the upper and lower layers of CNT thin films, specifically using silicon substrates and ruthenium or silicon carbide protective thin films, to enhance the pellicle's resistance to plasma damage during the manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If CNT thin film is used for pellicle, then EUV transmittance is improved, but plasma damage resistance deteriorates
Solution Approach 1:
The pellicle is constructed as a composite structure with multiple layers including CNT thin film, protective films (such as silicon oxide, silicon nitride, or silicon carbide), and buffer films. This composite approach allows the CNT layer to provide high EUV transmittance while the protective films shield it from plasma damage during manufacturing and operation.
Solution Approach 2:
Protective films are introduced as intermediary layers between the CNT thin film and the plasma environment. These films act as mediators that absorb or deflect plasma particles, preventing direct contact with and damage to the CNT structure while maintaining optical performance.
2Reliability
If protective films are added to protect CNT from plasma, then plasma damage resistance is improved, but transmittance deteriorates
Solution Approach 1:
The protective films are designed as thin film structures that provide adequate plasma protection while minimizing their thickness to reduce optical absorption. The buffer films and protective coatings are optimized to be sufficiently thin to maintain high EUV transmittance while still providing effective plasma damage resistance.
Solution Approach 2:
The thickness, composition, and optical properties of the protective and buffer films are carefully optimized to achieve the right balance between protection and transmittance. By adjusting film thickness parameters and material composition, the system achieves both plasma resistance and high EUV transmission.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method results in pellicles with high transparency, durability, and mechanical rigidity, providing greater resistance to plasma-generated exposure, thus improving the reliability and longevity of the CNT thin film layers.
Implementation Method 1
the CNT is etched (damaged) by a plasma since being made of carbon
Implementation Method 2
the CNT thin film can obtain high EUV transmittance due to low atom density
Data Source
AI summary
A manufacturing method includes the steps of: (a) preparing a lower layer member having a first base layer, a first protective thin film, and a first CNT thin film; (b) preparing a first upper layer member having a second base layer, a second protective thin film, and a second CNT thin film or a second upper layer member having a second base layer and a second protective thin film; (c) arranging the lower layer member above the first CNT thin film; (d) forming a group member by arranging the second CNT thin film of the first upper layer member or the second protective film of the second upper layer member to be stacked on the first CNT thin film; and € removing the second base layer from the group member.