EUV Pellicle Graphite Layer Bond Modification
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Solution Overview
Problem
Pellicles used in extreme ultraviolet exposure processes for semiconductor manufacturing require high light transmittance, durability, and mechanical strength, but existing materials struggle to maintain these properties, especially as critical dimensions of semiconductor devices decrease, necessitating improved heat dissipation and chemical resistance.
Innovation Solution
A pellicle configuration involving a graphite-containing layer, a surface-treated first treatment layer with reduced C—O—C bonds, and a thin hydrogen-resistant passivation layer formed by atomic layer deposition, connected via a C—O—X bond, where element X includes Ti, B, Si, or Mo, enhancing durability and transmittance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a graphite-containing layer is used for the pellicle, then heat dissipation characteristics are improved, but chemical durability and bond stability deteriorate due to C-O-C bonds
Solution Approach 1:
The patent applies parameter changes by modifying the chemical bonds in the graphite-containing layer through surface treatment. Specifically, C-O-C bonds are removed and replaced with C=O, C-OH, or O=C-OH bonds through oxidation treatment, which improves chemical durability while maintaining the heat dissipation properties of the graphite structure.
Solution Approach 2:
The patent creates a composite structure by combining the graphite-containing layer with a passivation layer containing element X (Ti, B, Si, Zr, or Mo). The passivation layer forms C-O-X bonds with the treated graphite layer, creating a composite material that provides both thermal management and enhanced chemical resistance.
2Illumination intensity
If the pellicle is designed for high light transmittance, then photolithography efficiency is improved, but mechanical strength and durability may be compromised
Solution Approach 1:
The patent employs composite materials by stacking multiple functional layers: a graphite-containing layer for thermal management, a surface-treated layer for chemical stability, and a passivation layer for mechanical protection. This composite structure achieves high light transmittance while providing the necessary mechanical strength and durability for EUV photolithography applications.
3Length of moving object
If the critical dimension of semiconductor devices is decreased, then device compactness is improved, but the requirements for light wavelength and pellicle performance become more stringent
Solution Approach 1:
The patent addresses the stringent requirements for smaller critical dimensions by optimizing the pellicle's optical and thermal parameters. The graphite-containing layer with modified bonds and the passivation layer are designed to maintain high transmittance at shorter EUV wavelengths while providing enhanced thermal management and chemical resistance necessary for high-precision lithography.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables high transmittance and improved durability, tensile strength, and EUV resistance, facilitating the efficient manufacture of smaller, more compact semiconductor devices with enhanced EUV exposure processes.
Implementation Method 1
the forming of the first treatment layer may include removing a C—O—C bond included in the graphite-containing layer through the surface-treating of the first surface
Implementation Method 2
the forming of the first treatment layer may include generating at least one of a C═O bond, a C—OH bond, or an O═C—OH bond through the surface-treating of the first surface
Implementation Method 3
forming a thin hydrogen-resistant passivation layer formed by atomic layer deposition
Data Source
AI summary
A method of manufacturing a pellicle for an extreme ultraviolet exposure includes forming a graphite-containing layer on a catalyst substrate; surface-treating a first surface of the graphite-containing layer to form a first treatment layer; and forming a first passivation layer on the first treatment layer, wherein the forming of the first treatment layer includes removing a C—O—C bond included in the graphite-containing layer through the surface-treating of the first surface.