EUV Photomask Imaging Through Pellicle Using Gas Amplification

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Solution Overview

Problem

Conventional scanning electron microscopy systems struggle to effectively image photomasks through protective pellicles, especially those used in extreme ultraviolet (EUV) lithography, due to limitations in detecting small defect particles and the conductive pellicle's interference with electron imaging.

Innovation Solution

A scanning electron microscopy (SEM) system and method that includes an electron beam source, sample stage, and electron-optical column to direct the electron beam through a pellicle, using backscattered and secondary electron detection, as well as a pressurized gas medium to amplify weak secondary electrons, allowing for improved imaging of photomasks through the pellicle.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a protective pellicle film is positioned above the photomask to protect it, then the photomask is protected from damage, but the ability of conventional imaging systems to image the photomask is severely limited

Engineering Contradiction:
Improvephotomask protectionVSAvoidphotomask imaging capability
Core Design Contradiction:
ReliabilityVSDifficulty of detecting and measuring

Solution Approach 1:

The patent introduces a gas medium as an intermediary between the electron beam and the photomask surface. This gas medium serves as a mediator that allows electron beam penetration while maintaining the protective function of the pellicle, thereby resolving the contradiction between protection and imaging capability

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent changes the physical state and parameters of the imaging environment by introducing a pressurized gas medium. This parameter change enables the electron beam to interact with the photomask through the gas, overcoming the blocking effect of the pellicle while maintaining protection

Inventive Principle:
Principle #35Parameter changes

2Device complexity

If conventional secondary electron detectors are used to image the photomask, then the system structure remains simple, but the detection of small defect particles as small as 10 nm in diameter is severely limited

Engineering Contradiction:
Improvedetector system structureVSAvoiddefect particle detection capability
Core Design Contradiction:
Device complexityVSMeasurement precision

Solution Approach 1:

The patent replaces conventional mechanical secondary electron detectors with a gas-based detection mechanism. The gas medium interacts with the electron beam to produce detectable signals that provide much higher measurement precision for small defect particles, while the overall system structure remains relatively simple

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

3Ease of operation

If the electron beam is directed through the pellicle onto the photomask, then imaging can be achieved, but the electron signal is weakened and requires amplification

Engineering Contradiction:
Improveimaging capabilityVSAvoidelectron signal strength
Core Design Contradiction:
Ease of operationVSUse of energy by moving object

Solution Approach 1:

The gas medium acts as an energy amplification intermediary, where the electron beam interacts with the gas molecules to generate secondary electrons and photons. This intermediary process amplifies the weak electron signal that would otherwise be lost when passing through the pellicle, maintaining adequate signal strength for imaging

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables the detection of small defects on photomasks, such as phase defects and haze formation, by collecting backscattered and secondary electrons, and amplifying weak signals, enhancing the resolution and sensitivity of EUV photomask inspection.

Implementation Method 1

an electron beam source configured to generate an electron beam

Methodology Applied
Scientific EffectElectron beam: Electron Beam

Implementation Method 2

an electron-optical column including a set of electron-optical elements to direct at least a portion of the electron beam through the pellicle

Methodology Applied
Scientific EffectElectron-optical effect: Electro-Optic Effects

Implementation Method 3

detecting at least one of backscattered electrons scattered from the surface of the sample

Methodology Applied
Scientific EffectBackscattering: Scattering

Implementation Method 4

secondary electrons emitted from the surface of the sample

Methodology Applied
Scientific EffectSecondary electron emission: Photoelectric Effect

Implementation Method 5

the selected gas amplifies electrons emanating from the surface of the sample

Methodology Applied
Scientific EffectElectron-gas interaction amplification: Electron Avalanche

Data Source

PatentUS9842724B2Method and system for imaging of a photomask through a pellicle
Publication Date: 2017.12.12 KLA CORP
  • US9842724B2 patent drawing
  • US9842724B2 patent drawing
  • US9842724B2 patent drawing

AI summary

A system for imaging a sample through a protective pellicle is disclosed. The system includes an electron beam source configured to generate an electron beam and a sample stage configured to secure a sample and a pellicle, wherein the pellicle is disposed above the sample. The system also includes an electron-optical column including a set of electron-optical elements to direct at least a portion of the electron beam through the pellicle and onto a portion of the sample. In addition, the system includes a detector assembly positioned above the pellicle and configured to detect electrons emanating from the surface of the sample.