EUV Pellicle Roller Scanning for Mask Contamination
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Solution Overview
Problem
Existing EUV exposure technologies face challenges in effectively protecting EUV masks from contamination during the exposure process due to the fragility and instability of thin pellicles, which can be easily damaged and fail to maintain a consistent template form, leading to errors in the exposure process.
Innovation Solution
An EUV mask protection apparatus is designed with a small-sized EUV pellicle corresponding to the slit of the exposure apparatus, supported by sturdy flexible blocking films on both sides, and a roller unit that synchronizes the pellicle's movement with the scan position, ensuring effective contamination prevention and maintaining a consistent exposure path.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If a thin pellicle is used to protect the EUV mask, then the mask is protected from contamination, but the pellicle is easily damaged and fails to maintain consistent template form
Solution Approach 1:
The pellicle is divided into multiple segments or zones with different thicknesses or material compositions. The central region has a thinner structure for optimal light transmission, while peripheral regions have thicker support structures for enhanced stability and contamination protection.
Solution Approach 2:
The pellicle employs composite material construction combining different materials with complementary properties. A lightweight, transparent material provides contamination protection, while integrated support structures made of stronger materials maintain template form consistency and prevent damage during handling and exposure.
2Object-affected harmful factors
If the pellicle size is increased to cover the entire mask, then contamination protection is improved, but the pellicle becomes more fragile and unstable
Solution Approach 1:
The pellicle implements local quality variations where different regions have different properties. The central exposure area has optimized thickness and material for light transmission, while peripheral areas have enhanced structural support and thickness to prevent instability and maintain form consistency across the entire mask surface.
Solution Approach 2:
The pellicle design incorporates three-dimensional structural elements such as support ribs, framework structures, or layered configurations that provide mechanical stability without significantly increasing the two-dimensional footprint. This allows the pellicle to span the entire mask area while maintaining form consistency through vertical structural support.
3Object-affected harmful factors
If a larger pellicle is used to cover the full mask area, then mask protection is improved, but the exposure process complexity increases
Solution Approach 1:
The support and stabilization functions are extracted from the main pellicle body and implemented as separate, integrated structures. This allows the pellicle to maintain a relatively simple, thin configuration for light transmission while incorporating necessary support elements that reduce overall system complexity compared to a fully thickened pellicle design.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively prevents contamination of the EUV mask, maintains the stability of the exposure process, and extends the life of the EUV mask by using a pellicle that is optimized for scanning, ensuring high-quality pattern transfer onto wafers without influencing the scanning process.
Implementation Method 1
an EUV pellicle that allows EUV light to be radiated through the EUV pellicle onto the EUV mask
Implementation Method 2
The EUV pellicle may include silicon and has a thickness of about 80 nm or less
Data Source
AI summary
An apparatus for protecting an extreme ultra violet (EUV) mask includes an EUV pellicle that allows EUV light to be radiated through the EUV pellicle onto the EUV mask, the EUV pellicle having a size corresponding to a size of a slit limiting the EUV light to a predetermined portion of the EUV mask, a flexible blocking film at opposite sides of the EUV pellicle in a first direction, the first direction being a scan direction of an exposure apparatus, and a roller unit including a first roller and a second roller, a first portion of the flexible blocking film being wound around the first roller at a first side of the EUV pellicle, and a second portion of the flexible blocking film being wound around the second roller at a second side of the EUV pellicle.