EUV Pellicle Metal Silicide Capping Layer Transmittance
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Solution Overview
Problem
Existing pellicles for extreme ultraviolet (EUV) lithography lack sufficient transmittance and thermal emissivity, leading to light loss and thermal shock issues during EUV lithography processes.
Innovation Solution
A method for manufacturing a pellicle with a metal silicide capping layer using a silicon precursor and a metal precursor, where the capping layer is formed by atomic layer deposition or chemical vapor deposition, enhancing transmittance and thermal emissivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If a pellicle material is used for EUV lithography, then the light source can be transmitted through the pellicle, but the transmittance is insufficient causing light loss
Solution Approach 1:
The patent applies composite materials by forming a metal silicide capping layer (such as MoSi2, WSi2, or TiSi2) on the silicon core layer. This composite structure combines the high transmittance of silicon with the high thermal emissivity of metal silicides, achieving both excellent light transmission (90% or more) and thermal management capabilities necessary for EUV lithography
Solution Approach 2:
The patent changes the material parameters by selecting specific metal precursors (Mo, Ni, Ru, Pt, Cu, Ti, Zr, Nb, Hf, Ta, W, or Cr) and controlling the metal-to-silicon molar ratio (1:0.2 to 6) during deposition. These parameter adjustments optimize both the optical transmittance and thermal emissivity properties of the pellicle for EUV applications
2Temperature
If a pellicle material is used for EUV lithography, then the light source can pass through the pellicle, but the thermal shock resistance is insufficient
Solution Approach 1:
The metal silicide capping layer serves as a composite material that combines the thermal stability of silicon with the high thermal emissivity of metal silicides. This composite structure enables the pellicle to withstand thermal shock by efficiently radiating heat while maintaining structural integrity during rapid heating and cooling cycles in EUV lithography
Solution Approach 2:
The patent optimizes thermal parameters by controlling the deposition conditions, including temperature control during deposition, metal-to-silicon molar ratio (1:0.2 to 6), and selecting specific metals with appropriate thermal properties. These parameter changes ensure the capping layer has sufficient thermal emissivity to handle the 600-1200°C thermal excursions while maintaining EUV transmittance
3Reliability
If a metal silicide capping layer is formed on the core layer, then the transmittance and thermal emissivity are improved, but the manufacturing process becomes more complex
Solution Approach 1:
The patent replaces complex multi-step manufacturing processes with atomic layer deposition (ALD) or chemical vapor deposition (CVD) techniques. These deposition methods allow for precise, controlled formation of the metal silicide capping layer in a single continuous process, eliminating the need for multiple separate fabrication steps while achieving the desired metal-to-silicon ratio and layer uniformity
Solution Approach 2:
The ALD or CVD process enables self-service manufacturing where the metal precursor and silicon precursor automatically react to form the metal silicide capping layer with controlled stoichiometry. The process self-regulates the metal-to-silicon ratio through controlled precursor delivery and reaction conditions, reducing the need for complex post-processing adjustments
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The pellicle exhibits excellent transmittance of 85% or more and reduced reflectivity, along with improved thermal and mechanical durability, making it suitable for EUV lithography applications.
Implementation Method 1
adsorbing the silicon precursor and the metal precursor onto the core layer
Implementation Method 2
the forming of the metal silicide capping layer may be performed by atomic layer deposition (ALD) or chemical vapor deposition (CVD)
Implementation Method 3
the forming of the metal silicide capping layer may be performed by atomic layer deposition (ALD) or chemical vapor deposition (CVD)
Data Source
AI summary
The present invention provides a method for manufacturing a pellicle and a pellicle for extreme ultraviolet exposure manufactured by the method, the method comprising a step of forming a metal silicide capping layer by using a silicon precursor and a metal precursor, wherein the pellicle can exhibit excellent performance in terms of transmittance and thermal emissivity.